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LA1207 , FM/AM IF AMP FOR RADIO CASSETE MUSIC CENTER
KSP94
PNP Epitaxial Silicon Transistor
KSP94 KSP94 High Voltage Transistor • High Collector-Emitter Voltage: V = -400V CEO • Low Collector-Emitter Saturation Voltage • Complement to KSP44 TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage -400 V CBO V Collector-Emitter Voltage -400 V CEO V Emitter-Base Voltage -6 V EBO I Collector Current -300 mA C P Collector Power Dissipation 625 mW C T Junction Temperature 150 °C J T Storage Temperature -55~150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -100μA, I =0 -400 V CBO C E BV Collector-Emitter Breakdown Voltage I = -100μA, V =0 -400 V CES C BE BV Emitter-Base Breakdown Voltage I = -10μA, I =0 -6 V EBO E C I Collector Cut-off Current V = -300V, V =0 -100 nA CBO CB E I Collector Cut-off Current V = -400V, V =0V -1 μA CES CE BE I Emitter Cut-off Current V = -4V, I =0 -100 nA EBO BE C 40 h DC Current Gain V = -10V, I = -1mA FE1 CE C h V = -10V, I = -10mA 50 300 FE2 CE C h V = -10V, I = -50mA 45 FE3 CE C h V = -10V, I = -100mA 40 FE4 CE C -500 mV V (sat) Collector-Emitter Saturation Voltage I = -10mA, I = -1mA CE 1 C B V (sat) I = -50mA, I = -5mA -750 mV CE 2 C B V (sat) Base-Emitter Saturation Voltage I = -10mA, I = -1mA -750 mV BE C B C Output Capacitance V = -20V, I =0, f=1MHz 7 pF ob CB E ©2002 Rev. A2, July 2002
