KSP8098 ,NPN Epitaxial Silicon TransistorKSP8098/8099KSP8098/8099Amplifier Transistor• Collector-Emitter Voltage: V = KSP8098: 60VCEOKSP8099 ..
KSP8099 ,NPN Epitaxial Silicon TransistorKSP8098/8099KSP8098/8099Amplifier Transistor• Collector-Emitter Voltage: V = KSP8098: 60VCEOKSP8099 ..
KSP92 ,PNP Epitaxial Silicon TransistorKSP92/93KSP92/93High Voltage TransistorTO-9211. Emitter 2. Base 3. CollectorPNP Epitaxial Silic ..
KSP92BU ,PNP Epitaxial Silicon TransistorKSP92/93KSP92/93High Voltage TransistorTO-9211. Emitter 2. Base 3. CollectorPNP Epitaxial Silic ..
KSP93 ,PNP Epitaxial Silicon TransistorKSP92/93KSP92/93High Voltage TransistorTO-9211. Emitter 2. Base 3. CollectorPNP Epitaxial Silic ..
KSP93BU ,PNP Epitaxial Silicon TransistorKSP92/93KSP92/93High Voltage TransistorTO-9211. Emitter 2. Base 3. CollectorPNP Epitaxial Silic ..
LA1177 ,Electronic Tuning-Use FM Front End for Car Radio, Home StereosOrdering number : EN2257BMonolithic Linear ICLA1177Electronic Tuning-Use FM Front Endfor Car Radio, ..
LA1178M ,FM Front End for Car Radio, Home Radio-UseFeatures• Excellent intermodulation characteristic (wide-band AGCcircuit)• On-chip local oscillatio ..
LA1180 ,MONOLITHIC LINEAR IC FM FRONT END FOR RADIO CASSETTE RECORDER USENo.1338c / LA1 180',l,t, MonoHFthic Linear TTdt _ FRONT ENDFOR R/uno-CASSETTE R tups UseThe LA11M i ..
LA1185 ,FM Front-end for Radio-cassette Recorder, Home Stereo ApplicationsOrdering number: EN1521DMonolithic Linear ICLA1185FM Front-end for Radio-cassette Recorder, HomeSte ..
LA1186 ,FM Front End for Radio-Cassette Recorders, Music CentersFeatures and FunctionsPackage Dimensions• Contains RF amplifier, MIX, OSC, AFC diode.unit: mm• Oper ..
LA1186N ,FM Front End for Radio-Cassette Recorders, Music CentersOrdering number : EN1840AMonolithic Linear ICLA1186NFM Front End for Radio-Cassette Recorders,Music ..
KSP8098-KSP8099
NPN Epitaxial Silicon Transistor
KSP8098/8099 KSP8098/8099 Amplifier Transistor • Collector-Emitter Voltage: V = KSP8098: 60V CEO KSP8099: 80V • Collector Power Dissipation: P (max)=625mW C • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage CBO : KSP8098 60 V : KSP8099 80 V V Collector-Emitter Voltage CEO : KSP8098 60 V : KSP8099 80 V V Emitter-Base Voltage 6 V EBO I Collector Current 500 mA C P Collector Power Dissipation 625 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Base Breakdown Voltage I =100μA, I =0 CBO C E : KSP8098 60 V : KSP8099 80 V BV * Collector-Emitter Breakdown Voltage I =10mA, I =0 CEO C B : KSP8098 60 V : KSP8099 80 V BV Emitter-Base Breakdown Voltage I =10μA, I =0 6 V EBO E C I Collector Cut-off Current CBO : KSP8098 V =60V, I =0 100 nA CB E : KSP8099 V =80V, I =0 100 nA CB E I Collector Cut-off Current V =60V, I =0 100 nA CEO CE B I Emitter Cut-off Current V =6V, I =0 100 nA EBO EB C h DC Current Gain V =5V, I =1mA 100 300 FE CE C V =5V, I =10mA 100 CE C V =5V, I =100mA 75 CE C V (sat) Collector-Emitter Saturation Voltage I =100mA, I =5mA 0.4 V CE C B I =100mA, I =10mA 0.3 V C B V (on) * Base-Emitter On Voltage BE : KSP8098 V =5V, I =1mA 0.5 0.7 V CE C : KSP8099 V =5V, I =10mA 0.6 0.8 V CE C f Current Gain Bandwidth Product V =5V, I =10mA 150 MHz T CE C f=100MHz C Output Capacitance V =5V, I =0 6pF ob CB E f=1MHz * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% ©2001 Rev. A1, July 2001
