KSP10TA ,NPN Epitaxial Silicon TransistorKSP10KSP10VHF/UHF transistorTO-9211. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon Transist ..
KSP12 ,NPN Epitaxial Silicon Darlington TransistorKSP12KSP12Darlington Transistor• Collector-Emitter Voltage: V =20VCES• Collector Power Dissipation: ..
KSP12BU ,NPN Epitaxial Silicon Darlington TransistorKSP12KSP12Darlington Transistor• Collector-Emitter Voltage: V =20VCES• Collector Power Dissipation: ..
KSP12TA ,NPN Epitaxial Silicon Darlington TransistorKSP12KSP12Darlington Transistor• Collector-Emitter Voltage: V =20VCES• Collector Power Dissipation: ..
KSP13 ,NPN Epitaxial Silicon Darlington TransistorKSP13/14KSP13/14Darlington Transistor• Collector-Emitter Voltage: V =30VCES• Collector Power Dissip ..
KSP13BU ,NPN Epitaxial Silicon Darlington TransistorKSP13/14KSP13/14Darlington Transistor• Collector-Emitter Voltage: V =30VCES• Collector Power Dissip ..
LA1060 ,Antenna Switching Diversity Circuit for Car-Use FM TunersElectrical Characteristics at Ta=25°C, V =8.0V, f=100kHz sine waveCCRatingsParameter Symbol Conditi ..
LA1060 ,Antenna Switching Diversity Circuit for Car-Use FM TunersFeatures• "Count system"-used, reliable detection of multipathdistortion.• One-tuner type diversity ..
LA1061 ,Antenna Switching ControllerOrdering number : EN3044AMonolithic Linear ICLA1061MAntenna Switching ControllerOverviewPackage Dim ..
LA1061M ,Antenna Switching ControllerBlock DiagramUnit (resistance : Ω)No.3044-2/8LA1061MOperating Characteristic Test CircuitUnit (resi ..
LA1061M ,Antenna Switching ControllerOrdering number : EN3044AMonolithic Linear ICLA1061MAntenna Switching ControllerOverviewPackage Dim ..
LA1061M ,Antenna Switching ControllerFeatures• Uses Sanyo's proprietary AGC amplifier and detector, providing accurate detection of mult ..
KSP10TA
NPN Epitaxial Silicon Transistor
KSP10 KSP10 VHF/UHF transistor TO-92 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter-Base Voltage 3.0 V EBO P Collector Power Dissipation (T =25°C) 350 mW C a Derate above 25°C2.8mW/°C P Collector Power Dissipation (T =25°C) 1.0 W C C Derate above 25°C8.0W/°C T Junction Temperature 150 °C J T Storage Temperature -55~150 °C STG Rth(j-c) Thermal Resistance, Junction to Case 125 °C/W Rth(j-a) Thermal Resistance, Junction to Ambient 357 °C/W Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Base Breakdown Voltage I =100μA, I =0 30 V CBO C E BV Collector-Emitter Breakdown Voltage I =1mA, I =0 25 V CEO C B BV Emitter-Base Breakdown Voltage I =10μA, I =0 3.0 V EBO E C I Collector Cut-off Current V =25V, I =0 100 nA CBO CB E I Emitter Cut-off Current V =2V, I =0 100 nA EBO EB C h DC Current Gain V =10V, I =4mA 60 FE CE C V (sat) Collector-Emitter Saturation Voltage I =4mA, I =0.4mA 0.5 V CE C B V (on) Base-Emitter On Voltage V =10V, I =4mA 0.95 V BE CE C f Current Gain Bandwidth Product V =10V, I =4mA, f=100MHz 650 MHz T CE C C Output Capacitance V =10V, I =0, f=1MHz 0.7 pF ob CB E C Collector Base Feedback Capacitance V =10V, I =0, f=1MHz 0.35 0.65 pF rb CB E C Collector Base Time Constant V =10V, I =4mA, 9.0 ps c·rbb´ CB C f=31.8MHz * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2002 Rev. A2, September 2002
