KSK595HMTF ,Silicon N-Channel Junction FETApplications• Especially Suited for use in Audio, Telephone Capacitor Microphones3• Excellent Volt ..
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KSK595HMTF
Silicon N-Channel Junction FET
KSK595H KSK595H Capacitor Microphone Applications • Especially Suited for use in Audio, Telephone Capacitor Microphones 3 • Excellent Voltage Characteristic • Excellent Transient Characteristic 2 SOT-23 1 1.Drain 2. Source 3. Gate Si N-channel Junction FET Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Gate-Drain Voltage -20 V GDO I Gate Current 10 mA G I Drain Current 1 mA D P Power Dissipation 100 mW D T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Gate-Drain Breakdown Voltage I = -100uA -20 V GDO G V (off) Gate-Source Cut-off Voltage V =5V, I =1μA -0.6-1.5V GS DS D I Drain Current V =5V, V =0 150 350 μA DSS DS GS lY l Forward Transfer Admittance V =5V, V =0, f=1MHz 0.4 1.2 ms FS DS GS C Input Capacitance V =5V, V =0, f=1MHz 3.5 pF iss DS GS C Output Capacitance V =5V, V =0, f=1MHz 0.65 pF rss DS GS ©2002 Rev. C1, October 2002
