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KSE44H11FAIRCHILDN/a110avaiNPN Epitaxial Silicon Transistor
KSE44H11TUFAIRCHILDN/a13800avaiNPN Epitaxial Silicon Transistor


KSE44H11TU ,NPN Epitaxial Silicon TransistorKSE44H SeriesKSE44H SeriesGeneral Purpose Power Switching
KSE45H11 ,PNP Epitaxial Silicon TransistorKSE45H SeriesKSE45H SeriesGeneral Purpose Power Switching
KSE45H11TU ,PNP Epitaxial Silicon TransistorApplications• Low Collector-Emitter Saturation Voltage: V (sat) = -1V (MAX)@-8ACE• Fast Switching S ..
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KSE702 ,PNP Epitaxial Silicon Darlington TransistorKSE700/701/702/703KSE700/701/702/703Monolithic Construction With Built-in Base-Emitter Resistors• H ..
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L9822EPD013TR ,OCTAL SERIAL SOLENOID DRIVERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV DC Logic Supply – 0.7 7 VCCV Output Voltage – ..
L9822N ,OCTAL SERIAL SOLENOID DRIVERELECTRICAL CHARACTERISTICS (Continued)Symbol Parameter Test Conditions Min. Typ. Max. UnitINPUT BUF ..
L9823 ,OCTAL LOW-SIDE DRIVER FOR BULB, RESISTIVE AND INDUCTIVE LOADS WITH SERIAL INPUT CONTROL, OUTPUT PROTECTION AND DIAGNOSTICBLOCK DIAGRAMV16 DDSFPDOUT0-15 OL0+ 24VDG=IOLCSBGateQ010Q0ControlQ1+Q2 I 0SCB -Q3Over-Q4OT0 Tempera ..
L9823013TR ,OCTAL LOW-SIDE DRIVER FOR BULB, RESISTIVE AND INDUCTIVE LOADS WITH SERIAL INPUT CONTROL, OUTPUT PROTECTION AND DIAGNOSTICBLOCK DIAGRAMV16 DDSFPDOUT0-15 OL024+VDG=IOLCSBGateQ010Q0ControlQ1+IQ2 0-SCBQ3Over-Q4Temperature +O ..
L9825 ,OCTAL LOW-SIDE DRIVER FOR RESISTIVE AND INDUCTIVE LOADS WITH SERIAL/PARALLEL INPUT CONTROL,OUTPUT PROTECTION AND DIAGNOSTICL9825Octal Low-side Driver For Resistive and Inductive Loads WithSerial / Parallel Input Control, O ..
L9825 ,OCTAL LOW-SIDE DRIVER FOR RESISTIVE AND INDUCTIVE LOADS WITH SERIAL/PARALLEL INPUT CONTROL,OUTPUT PROTECTION AND DIAGNOSTICBLOCK DIAGRAMVCCVCC OUT1NON113IS OL2Latch / DriverQ1R+Diag1Fault Latch - VDGCH1NON2OUT2VQ2CC CH2Dia ..


KSE44H11-KSE44H11TU
NPN Epitaxial Silicon Transistor
KSE44H Series KSE44H Series General Purpose Power Switching Applications • Low Collector-Emitter Saturation Voltage : V (sat) = 1V (Max.) @ 8A CE • Fast Switching Speeds • Complement to KSE45H TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Emitter Voltage : KSE44H 1,2 30 V CEO : KSE44H 4,5 45 V : KSE44H 7,8 60 V : KSE44H 10,11 80 V V Emitter- Base Voltage 5 V EBO I Collector Current (DC) 10 A C I *Collector Current (Pulse) 20 A CP P Collector Dissipation (T =25°C) 50 W C C P Collector Dissipation (T =25°C) 1.67 W C a T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V = Rated V , V = 0 10 μA CES CE CEO EB I Emitter Cut-off Current V = 5V, I = 0 100 μA EBO EB C h *DC Current Gain FE : KSE44H 1,4,7,10 V = 1V, I = 2A 35 CE C : KSE44H 2,5,8,11 60 V (sat) *Collector-Emitter Saturation Voltage CE : KSE44H 1, 4, 7 10 I = 8A, I = 0.8A 1 V C B : KSE44H 2, 5, 8,11 I = 8A, I = 0.4A 1 V C B V (sat) *Base-Emitter Saturation Voltage I = 8A, I = 0.8A 1.5 V BE C B f Current Gain Bandwidth Product V = 10V, I = 0.5A 50 MHz T CE C C Output Capacitance V = 10V, f = 1MHz 130 pF ob CB t Turn ON Time V =20V, I = 5A 300 ns ON CC C I = - I = 0.5A t Storage Time B1 B2 500 ns STG t Fall Time 140 ns F * Pulse test: PW≤300μs, Duty cycle≤2% ©2001 Rev. A1, June 2001
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