IC Phoenix
 
Home ›  KK12 > KSE13009F,NPN Silicon Transistor
KSE13009F Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
KSE13009FSECN/a80avaiNPN Silicon Transistor


KSE13009F ,NPN Silicon TransistorKSE13008/13009KSE13008/13009High Voltage Switch Mode Application• High Speed Switching• Suitable fo ..
KSE13009FTU ,NPN Silicon TransistorKSE13008/13009KSE13008/13009High Voltage Switch Mode Application• High Speed Switching• Suitable fo ..
KSE13009L ,NPN Silicon TransistorApplications High Speed Switching Suitable for Switching Regulator and Motor ControlTO-3P11.Base ..
KSE180 ,NPN Epitaxial Silicon TransistorApplicationsTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon Transistor Absolute Max ..
KSE182 ,NPN Epitaxial Silicon TransistorApplicationsTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon Transistor Absolute Max ..
KSE2955T ,PNP Silicon TransistorApplications• DC Current Gain Specified to I = 10 AC• High Current Gain Bandwidth Product : f = 2M ..
L9813 ,SUPER SMART MIRROR WITH EMBEDDED MCUFEATURES■ 8-18V Supply Operating Range■ 16 MHz Maximum Oscillator Frequency■ 8 MHz Maximum Internal ..
L9820 ,HIGH SIDE DRIVERBLOCK DIAGRAM40mΩ1/6February 1994This is advanced information on a new product now in development o ..
L9820 ,HIGH SIDE DRIVERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Max Forward Voltage 50 VdcSI Reverse Bias Curr ..
L9820 ,HIGH SIDE DRIVERL9820HIGH SIDE DRIVERADVANCE DATAOPERATING SUPPLY VOLTAGE UP TO 25VMULTIPOWER BCD TECHNOLOGYDC CURR ..
L9820D ,HIGH SIDE DRIVERL9820HIGH SIDE DRIVERADVANCE DATAOPERATING SUPPLY VOLTAGE UP TO 25VMULTIPOWER BCD TECHNOLOGYDC CURR ..
L9820D013TR ,HIGH SIDE DRIVERL9820®HIGH SIDE DRIVEROPERATING SUPPLY VOLTAGE UP TO 25VMULTIPOWER BCD TECHNOLOGYDC CURRENT 0.3AR < ..


KSE13009F
NPN Silicon Transistor
KSE13008/13009 KSE13008/13009 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transisor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage CBO : KSE13008 600 V : KSE13009 700 V V Collector-Emitter Voltage CEO : KSE13008 300 V : KSE13009 400 V V Emitter-Base Voltage 9 V EBO I Collector Current (DC) 12 A C I Collector Current (Pulse) 24 A CP I Base Current 6 A B P Collector Dissipation (T =25°C) 100 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) Collector-Emitter Sustaining Voltage CEO : KSE13008 I = 10mA, I = 0 300 V C B : KSE13009 400 V I Emitter Cut-off Current V = 9V, I = 0 1 mA EBO EB C h * DC Current Gain V = 5V, I = 5A 8 40 FE CE C V = 5V, I = 8A 6 30 CE C V (sat) * Collector-Emitter Saturation Voltage I = 5A, I = 1A 1 V CE C B I = 8A, I = 1.6A 1.5 V C B I = 12A, I = 3A 3 V C B V (sat) * Base-Emitter Saturation Voltage I = 5A, I = 1A 1.2 V BE C B I = 8A, I = 1.6A 1.6 V C B C Output Capacitance V = 10V, f = 0.1MHz 180 pF ob CB f Current Gain Bandwidth Product V = 10V, I = 0.5A 4 MHz T CE C t Turn On Time V = 125V, I = 8A 1.1 μs ON CC C I = - I = 1.6A t Storage Time B1 B2 3 μs STG R = 15,6Ω L t Fall Time 0.7 μs F * Pulse test: PW≤300μs, Duty cycle≤2% ©2001 Rev. A1, January 2001
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED