KSD73YTU ,NPN Epitaxial Silicon TransistorKSD73KSD73Low Frequency High Power Amplifier Collector-Base Voltage : V = 100VCBO Collector Curr ..
KSD880-Y ,NPN Epitaxial Silicon TransistorKSD880KSD880Low Frequency Power Amplifier Complement to KSB834TO-22011.Base 2.Collector 3.Em ..
KSD880-Y ,NPN Epitaxial Silicon TransistorKSD880KSD880Low Frequency Power Amplifier Complement to KSB834TO-22011.Base 2.Collector 3.Em ..
KSD882 ,NPN Epitaxial Silicon TransistorKSD882KSD882Audio Frequency Power Amplifier Low Speed Switching Complement to KSB772TO-12611. Emit ..
KSD882-Y , Audio Frequency Power Amplifier
KSD882YS ,NPN Epitaxial Silicon TransistorKSD882KSD882Audio Frequency Power Amplifier Low Speed Switching Complement to KSB772TO-12611. Emit ..
L9700D013TR ,HEX PRECISION LIMITERL9700®HEX PRECISION LIMITERHIGH PERFORMANCE CLAMPING AT.GROUND AND POSITIVE REFERENCEVOLTAGE. FAST ..
L9700D-E ,Hex precision limiterFeatures■ High performance clamping at ground and positive reference voltage ■ Fast active clamping ..
L9703 ,OCTAL GROUND CONTACT MONITORING CIRCUITL9703OCTAL GROUND CONTACT MONITORING CIRCUIT. OPERATING DC SUPPLY VOLTAGE RANGE5V TO 25V. SUPPLY OV ..
L9703D ,OCTAL GROUND CONTACT MONITORING CIRCUITELECTRICAL CHARACTERISTICS (5V ≤ V ≤ 25V; -40°C ≤ T ≤ 125°C; 4.75V ≤ V ≤ 5.25V unless oth-S j CCerw ..
L9704 ,OCTAL SUPPLY CONTACT MONITORING CIRCUITELECTRICAL CHARACTERISTICS (5V ≤ VS ≤ 25V; -40°C ≤ Tj ≤ 125°C; 4.75V ≤ VCC ≤ 5.25V unlessotherwise ..
L9705 ,DOUBLE QUAD CONTACT INTERFACE CIRCUITL9705DOUBLE QUAD CONTACT INTERFACE CIRCUITADVANCE DATAOPERATING DC SUPPLY VOLTAGE RANGE5V TO 25VSUP ..
KSD73YTSTU-KSD73YTU
NPN Epitaxial Silicon Transistor
KSD73 KSD73 Low Frequency High Power Amplifier Collector-Base Voltage : V = 100V CBO Collector Current : I = 5A C Collector Dissipation : P = 30W (T =25°C) C C TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 100 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 5 A C P Collector Dissipation (T =25°C) 30 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = 1mA, I = 0 100 V CBO C E BV Collector-Emitter Breakdown Voltage I = 20mA, I = 0 60 V CEO C B BV Emitter-Base Breakdown Voltage I = 1mA, I = 0 5 V EBO E C I Collector Cut-off Current V = 100V, I = 0 5 mA CBO CB E h DC Current Gain V = 10V, I = 1.0A 70 240 FE CE C V (sat) Collector-Emitter Saturation Voltage I = 5A, I = 0.5A 2.0 V CE C B V (sat) Base-Emitter Saturation Voltage I = 5A, I = 0.5A 1.5 V BE C B f Current Gain Bandwidth Product V = 10V, I = 0.3A 20 MHz T CE C V (on) Base-Emitter ON Voltage V = 10V, I = 1.0A 0.75 V BE CE E h Classification FE Classification O Y h 70 ~ 140 120 ~ 240 FE ©2000 Fairchild Semiconductor International Rev. A, February 2000
