| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| KSD22S |
OTAX |
N/a |
360 |
 |
|
KSD261 ,NPN Epitaxial Silicon TransistorKSD261KSD261Low Frequency Power Amplifier• Complement to KSA643• Collector Power Dissipation : P =5 ..
KSD261 ,NPN Epitaxial Silicon TransistorKSD261KSD261Low Frequency Power Amplifier• Complement to KSA643• Collector Power Dissipation : P =5 ..
KSD288YTU ,NPN Epitaxial Silicon TransistorKSD288KSD288Power Regulator Low Frequency High Power Amplifier Collector-Base Voltage : V =80VCBO ..
KSD288YTU ,NPN Epitaxial Silicon TransistorKSD288KSD288Power Regulator Low Frequency High Power Amplifier Collector-Base Voltage : V =80VCBO ..
KSD288-YTU ,NPN Epitaxial Silicon TransistorKSD288KSD288Power Regulator Low Frequency High Power Amplifier Collector-Base Voltage : V =80VCBO ..
L9616D ,HIGH SPEED CAN BUS TRANSCEIVERELECTRICAL CHARACTERISTICS (T = -40 to 125°C; V = 4.5 to 5.5V; Dominat: VTXO = GND; Re-OP Scessive: ..
L9616-TR ,HIGH SPEED CAN BUS TRANSCEIVERELECTRICAL CHARACTERISTICS (T = -40 to 125°C; V = 4.5 to 5.5V; Dominat: VTXO = GND; Re-OP Scessive: ..
L9637D ,ISO INTERFACEelectrical characteristics are valid within the below defined op-erating conditions, unless otherwi ..
