KSD2012YTU ,NPN Epitaxial Silicon TransistorKSD2012KSD2012Low Frequency Power Amplifier Complement to KSB1366TO-220F11.Base 2.Collector ..
KSD2058YTU ,NPN Epitaxial Silicon TransistorKSD2058KSD2058Low Frequency Power AmplifierTO-220F11.Base 2.Collector 3.EmitterNPN Epitaxial ..
KSD261 ,NPN Epitaxial Silicon TransistorKSD261KSD261Low Frequency Power Amplifier• Complement to KSA643• Collector Power Dissipation : P =5 ..
KSD261 ,NPN Epitaxial Silicon TransistorKSD261KSD261Low Frequency Power Amplifier• Complement to KSA643• Collector Power Dissipation : P =5 ..
KSD288YTU ,NPN Epitaxial Silicon TransistorKSD288KSD288Power Regulator Low Frequency High Power Amplifier Collector-Base Voltage : V =80VCBO ..
KSD288YTU ,NPN Epitaxial Silicon TransistorKSD288KSD288Power Regulator Low Frequency High Power Amplifier Collector-Base Voltage : V =80VCBO ..
L9613 ,DATA INTERFACEABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Supply Voltage -24 to +36 VSISO transient t ≤ ..
L9613B ,DATA INTERFACEelectrical characteristics are valid within the below definedOperating Conditions, unless otherwise ..
L9613B013TR ,DATA INTERFACEELECTRICAL CHARACTERISTICS (continued)Symbol Parameter Test Condition Min. Typ. Max. UnitC Internal ..
L9613B013TR ,DATA INTERFACEL9613B®DATA INTERFACEOPERATING POWER SUPPLY VOLTAGERANGE 4.8V ≤ V ≤ 36V (40V FOR TRAN-SSIENTS)REVER ..
L9615D ,CAN BUS TRANSCEIVERELECTRICAL CHARACTERISTICS (T = -40 to 110°C; V = 4.5 to 5.5V; Dominat: VTXO = GND; Re-OP Scessive: ..
L9615D013TR ,CAN BUS TRANSCEIVERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Supply Voltage -0.3 to 7 VSVC_H, VC_L Bus Volt ..
KSD2012YTU
NPN Epitaxial Silicon Transistor
KSD2012 KSD2012 Low Frequency Power Amplifier Complement to KSB1366 TO-220F 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current 3 A C I Base Current 0.3 A B P Collector Power Dissipation (T =25°C) 25 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Emitter Breakdown Voltage I = 50mA, I = 0 60 V CEO C B I Collector Cut-off Current V = 60V, I = 0 100 μA CBO CB E I Emitter Cut-off Current V = 7V, I = 0 10 μA EBO EB C h DC Current Gain V = 5V, I = 0.5A 100 320 FE1 CE C h V = 5V, I = 3A 20 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = 2A, I = 0.2A 0.4 1 V CE C B V (on) Base-Emitter ON Voltage V = 5V, I = 0.5A 0.7 1 V BE CE C f Current Gain Bandwidth Product V = 5V, I = 0.5A 3 MHz T CE C h Classification FE Classification Y G h 100 ~ 200 150 ~ 320 FE1 ©2000 Fairchild Semiconductor International Rev. A, February 2000
