KSD1616AGTA ,NPN Epitaxial Silicon TransistorKSD1616/1616AKSD1616/1616AAudio Frequency Power Amplifier & Medium Speed Switching• Complement to K ..
KSD1616A-Y , NPN Silicon Epitaxial Transistors
KSD1621 ,NPN Epitaxial Silicon TransistorKSD1621KSD1621High Current Driver
KSD1621 ,NPN Epitaxial Silicon TransistorApplications• Low Collector-Emitter Saturation Voltage• Large Current Capacity and Wide SOA• Fast S ..
KSD1621STF ,NPN Epitaxial Silicon TransistorKSD1621KSD1621High Current Driver
KSD1621UTF ,NPN Epitaxial Silicon TransistorApplications• Low Collector-Emitter Saturation Voltage• Large Current Capacity and Wide SOA• Fast S ..
L9474 , ALL SILICON VOLTAGE REGULATOR
L9484 ,CAR ALTERNATOR VOLTAGE REGULATORABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitOutput Current Capability INTERNALLY LIMITED APo ..
L9524C ,Glow plug system control ICBlock diagram . . . . 5Figure 2. Pin connection (top view) . . . 6Figure 3. Shunt sens ..
L9524C-TR ,Glow plug system control ICFeatures■ Quad gate driver for external N-channel Power MOSFETs in high-side configuration:– Gates ..
L9610C ,PWM POWER MOS CONTROLLERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Max. Supply Voltage 26 VSTransient Peak Supply ..
L9613 ,DATA INTERFACEelectrical characteristics are valid within the below definedOperating Conditions, unless otherwise ..
KSD1616A-KSD1616AGBU-KSD1616AGTA
NPN Epitaxial Silicon Transistor
KSD1616/1616A KSD1616/1616A Audio Frequency Power Amplifier & Medium Speed Switching • Complement to KSB1116/1116A TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage : KSD1616 60 V CBO : KSD1616A 120 V V Collector-Emitter Voltage : KSD1616 50 V CEO : KSD1616A 60 V V Emitter-Base Voltage 6 V EBO I Collector Current (DC) 1 A C I * Collector Current (Pulse) 2 A CP P Collector Power Dissipation 0.75 W C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG * PW≤10ms, Duty Cycle < 50% Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V =60V, I =0 100 nA CBO CB E I Emitter Cut-off Current V =6V, I =0 100 nA EBO EB C h DC Current Gain : KSD1616 V =2V, I =100mA 135 600 FE1 CE C : KSD1616A 135 400 h V =2V, I =1A 81 FE2 CE C V (on) * Base-Emitter On Voltage V =2V, I =50mA 600 640 700 mV BE CE C V (sat) * Collector-Emitter Saturation Voltage I =1A, I =50mA 0.15 0.3 V CE C B V (sat) * Base-Emitter Saturation Voltage I =1A, I =50mA 0.9 1.2 V BE C B C Output Capacitance V =10V, I =0, f=1MHz 19 pF ob CE E f Current Gain Bandwidth Product V =2V, I =100mA 100 160 MHz T CE C t Turn On Time V =10V, I =100mA 0.07 μs ON CC C I = -I =10mA t Storage Time B1 B2 0.95 μs STG V (off) = -2~-3V BE t Fall Time 0.07 μs F * Pulse Test: PW<350μs, Duty Cycle≤2% Pulsed h Classification FE1 Classification Y G L h 135 ~ 270 200 ~ 400 300 ~ 600 FE1 ©2002 Rev. A2, September 2002
