KSD1221OTU ,NPN Epitaxial Silicon TransistorKSD1221KSD1221Low Frequency Power Amplifier Low Collector-Emitter Saturation Voltage Complement t ..
KSD1222TU ,NPN Epitaxial Silicon TransistorApplications• High DC Current Gain• Low Collector-Emitter Saturation Voltage• Built in a Damper Dio ..
KSD1273PTU ,NPN Epitaxial Silicon TransistorKSD1273KSD1273High h , AF Power AmplifierFE• ”Full PAK” Package for Simplified Mounting Only by a S ..
KSD1406 ,NPN Epitaxial Silicon TransistorKSD1406KSD1406Low Frequency Power Amplifier Low Collector-Emitter Saturation Voltage Complement t ..
KSD1408YTU ,NPN Epitaxial Silicon TransistorApplications Complement to KSB1017TO-220F11.Base 2.Collector 3.EmitterNPN Epitaxial Silicon ..
KSD1408YTU ,NPN Epitaxial Silicon TransistorKSD1408KSD1408Power Amplifier
L9407F ,CAR ALTERNATOR VOLTAGE REGULATORL9407FCAR ALTERNATOR VOLTAGE REGULATORPRODUCT PREVIEW■ FULLY MONOLITHIC DESIGN■ LOW SIDE FIELD DRIV ..
L9468 ,Alternator voltage regulator with protected diagnostic lamp driverAbsolute Maximum RatingsSymbol Parameter Value UnitV Thermal Supply Voltage (load dump) 40 VSI Outp ..
L9468N ,Alternator voltage regulator with protected diagnostic lamp driverFeatures■ FULLY MONOLITHIC DESIGN■ HIGH SIDE FIELD DRIVE■ THERMAL PROTECTION■ FIELD DRIVER SHORT CI ..
L9473 ,CAR ALTERNATOR VOLTAGE REGULATORBlock DiagramNTC4 178263Rev. 1May 2005 1/9L9473 Table 2. PIN DESCRIPTIONN° Pin Description1V Gener ..
L9474 , ALL SILICON VOLTAGE REGULATOR
L9484 ,CAR ALTERNATOR VOLTAGE REGULATORABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitOutput Current Capability INTERNALLY LIMITED APo ..
KSD1221OTU
NPN Epitaxial Silicon Transistor
KSD1221 KSD1221 Low Frequency Power Amplifier Low Collector-Emitter Saturation Voltage Complement to KSB906 1 I-PACK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current 3 A C I Base Current 0.5 A B P Collector Dissipation (T =25°C) 20 W C C P Collector Dissipation (T =25°C) 1 W C a T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Emitter Breakdown Voltage I = 50mA, I = 0 60 V CEO C B I Collector Cut-off Current V = 60V, I = 0 100 μA CBO CB E I Emitter Cut-off Current V = 7V, I = 0 100 μA EBO EB C h DC Current Gain V = 5V, I = 0.5A 60 300 FE1 CE C h V = 5V, I = 3A 20 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = 3A, I = 0.3A 0.4 1 V CE C B V (on) Base-Emitter ON Voltage I = 5A, I = 0.5A 0.7 1 V BE C C f Current Gain Bandwidth Product V = 5V, I = 0.5A 3 MHz T CE C C Output Capacitance V = 10V, f = 1MHz 70 pF ob CB t Turn ON Time V = 30V, I = 1A 0.8 μs ON CC C I = -I = 0.2A t Storage Time B1 B2 1.5 μs STG R = 30Ω L t Fall Time 0.8 μs F h Classification FE Classification O Y G h 60 ~ 120 100 ~ 200 150 ~ 300 FE1 ©2000 Fairchild Semiconductor International Rev. A, February 2000
