KSC5305DTU ,NPN Silicon TransistorApplications• No need to interest an hFE value because of low variable storage-time Bspread even t ..
KSC5402DTTU ,NPN Silicon Transistor Planar Silicon TransistorElectrical Characteristics T =25°C unless otherwise notedCSymbol Parameter Test Condition Min. Typ. ..
KSC5502D ,NPN Triple Diffused Planar Silicon TransistorElectrical Characteristics T =25°C unless otherwise notedCSymbol Parameter Test Condition Min. Typ. ..
KSC5502DTM ,NPN Triple Diffused Planar Silicon TransistorElectrical Characteristics T =25°C unless otherwise notedCSymbol Parameter Test Condition Min. Typ. ..
KSC5504DTM ,NPN Triple Diffused Planar Silicon TransistorElectrical Characteristics T =25°C unless otherwise notedCSymbol Parameter Test Condition Min. Typ. ..
KSC5504DTTU ,NPN Triple Diffused Planar Silicon TransistorKSC5504D/KSC5504DTKSC5504D/KSC5504DTD2-PAKEquivalent CircuitHigh Voltage High Speed Power Switch CA ..
L9305A ,DUAL HIGH CURRENT RELAY DRIVERblock diagram unless otherwise5 ambspecified)Symbol Parameter Test Conditions Min. Typ. Max. UnitV5 ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERBLOCK DIAGRAMOctober 1990 1/7This is advanced information on a new product now in development or un ..
L9332 ,Quad Intelligent Power Low Side SwitchFeaturesThe L9332 is a monolithic integrated quad low A Quad power low side driver with 3output s ..
L9333MD ,QUAD LOW SIDE DRIVERL9333QUAD LOW SIDE DRIVER■ WIDE OPERATING SUPPLY VOLTAGE MULTIPOWER BCD TECHNOLOGYRANGE FROM 4.5V U ..
KSC5305DTU
NPN Silicon Transistor
KSC5305D KSC5305D High Voltage High Speed Power Switch Equivalent Circuit Application C • Built-in Free-wheeling Diode makes efficient anti saturation operation • Suitable for half bridge light ballast Applications • No need to interest an hFE value because of low variable storage-time B spread even though corner spirit product TO-220 1 • Low base drive requirement 1.Base 2.Collector 3.Emitter E NPN Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector Base Voltage 800 V CBO V Collector Emitter Voltage 400 V CEO V Emitter Base Voltage 12 V EBO I Collector Current (DC) 5 A C I *Collector Current (Pulse) 10 A CP I Base Current (DC) 2 A B I *Base Current (Pulse) 4 A BP P Power Dissipation(T =25°C) 75 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Thermal Characteristics T =25°C unless otherwise noted C Symbol Characteristics Rating Unit R Thermal Resistance Junction to Case 1.65 °C/W θjc R Junction to Ambient 62.5 θja ©2001 Rev. A1, June 2001
