KSC3296YTU ,NPN Epitaxial Silicon TransistorKSC3296KSC3296Power Amplifier
KSC3296-YTU ,NPN Epitaxial Silicon TransistorApplications Complement to KSA1304TO-220F11.Base 2.Collector 3.EmitterNPN Epitaxial Silicon ..
KSC3502 ,NPN Epitaxial Silicon TransistorKSC3502KSC3502CRT Display, Video Output High Voltage : V =200VCEO Low Reverse Transfer Capacitanc ..
KSC3502 ,NPN Epitaxial Silicon TransistorKSC3502KSC3502CRT Display, Video Output High Voltage : V =200VCEO Low Reverse Transfer Capacitanc ..
KSC3502 ,NPN Epitaxial Silicon TransistorKSC3502KSC3502CRT Display, Video Output High Voltage : V =200VCEO Low Reverse Transfer Capacitanc ..
KSC3502-E , CRT Display, Video Output
L9177 ,Specific Functions, Engine Control IcsFeatures– Minimum guaranteed output current 500 mA - full step Supply voltage from 6 V to 18 V– Ro ..
L9222D ,QUAD INVERTING TRANSISTOR SWITCHFEATURESFigure 1. Packages■ OUTPUT VOLTAGE TO 50V■ OUTPUT CURRENT TO 1.2A■ VERY LOW SATURATION VOLT ..
L9305A ,DUAL HIGH CURRENT RELAY DRIVERblock diagram unless otherwise5 ambspecified)Symbol Parameter Test Conditions Min. Typ. Max. UnitV5 ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERBLOCK DIAGRAMOctober 1990 1/7This is advanced information on a new product now in development or un ..
KSC3296YTU-KSC3296-YTU
NPN Epitaxial Silicon Transistor
KSC3296 KSC3296 Power Amplifier Applications Complement to KSA1304 TO-220F 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 150 V CBO V Collector-Emitter Voltage 150 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current(DC) 1.5 A C I Base Current 0.5 A B P Collector Dissipation (T =25°C) 20 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V = 120V, I = 0 10 μA CBO CB E I Emitter Cut-off Current V = 5V, I = 0 10 μA EBO EB C h DC Current Gain V = 10V, I = 500mA 40 75 140 FE CE C V (sat) Collector-Emitter Saturation Voltage I = 500mA, I = 50mA 1.5 V CE C B V (on) Base-Emitter ON Voltage V = 10V, I = 500mA 0.65 0.75 0.85 V BE CE C f Current Gain Bandwidth Product V = 10V, I = 500mA 4 MHz T CE C C Output Capacitance V = 10V, f = 1MHz 35 pF ob CB ©2000 Fairchild Semiconductor International Rev. A, February 2000
