KSC2785YTA ,NPN Epitaxial Silicon TransistorKSC2785KSC2785Audio Frequency Amplifier & High Frequency OSC.• Complement to KSA1175• Collector-Bas ..
KSC2859OMTF ,NPN Epitaxial Silicon TransistorKSC2859KSC2859Low Frequency Power Amplifier• Complement to KSA1182321SOT-231. Base 2. Emitter 3 ..
KSC2859-OMTF ,NPN Epitaxial Silicon TransistorKSC2859KSC2859Low Frequency Power Amplifier• Complement to KSA1182321SOT-231. Base 2. Emitter 3 ..
KSC2859YMTF ,NPN Epitaxial Silicon TransistorKSC2859KSC2859Low Frequency Power Amplifier• Complement to KSA1182321SOT-231. Base 2. Emitter 3 ..
KSC2859-Y-MTF ,NPN Epitaxial Silicon TransistorKSC2859KSC2859Low Frequency Power Amplifier• Complement to KSA1182321SOT-231. Base 2. Emitter 3 ..
KSC2859-Y-MTF ,NPN Epitaxial Silicon TransistorKSC2859KSC2859Low Frequency Power Amplifier• Complement to KSA1182321SOT-231. Base 2. Emitter 3 ..
L9177 ,Specific Functions, Engine Control IcsFeatures– Minimum guaranteed output current 500 mA - full step Supply voltage from 6 V to 18 V– Ro ..
L9222D ,QUAD INVERTING TRANSISTOR SWITCHFEATURESFigure 1. Packages■ OUTPUT VOLTAGE TO 50V■ OUTPUT CURRENT TO 1.2A■ VERY LOW SATURATION VOLT ..
L9305A ,DUAL HIGH CURRENT RELAY DRIVERblock diagram unless otherwise5 ambspecified)Symbol Parameter Test Conditions Min. Typ. Max. UnitV5 ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERBLOCK DIAGRAMOctober 1990 1/7This is advanced information on a new product now in development or un ..
KSC2785YTA
NPN Epitaxial Silicon Transistor
KSC2785 KSC2785 Audio Frequency Amplifier & High Frequency OSC. • Complement to KSA1175 • Collector-Base Voltage : V =60V CBO TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 50 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 150 mA C P Collector Power Dissipation 250 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =100μA, I =0 60 V CBO C E BV Collector-Emitter Breakdown Voltage I =10mA, I =0 50 V CEO C B BV Emitter-Base Breakdown Voltage I =10μA, I =0 5 V EBO E C I Collector Cut-off Current V =40V, I =0 0.1 μA CBO CB E I Emitter Cut-off Current V =3V, I =0 0.1 μA EBO EB C h DC Current Gain V =6V, I =1.0mA 70 700 FE CE C V (sat) Collector-Emitter Saturation Voltage I =100mA, I =10mA 0.15 0.3 V CE C B f Current Gain Bandwidth Product V =6V, I =10mA 300 MHz T CE C C Output Capacitance V =6V, I =0, f=1MHz 2.5 pF ob CB E NF Noise Figure V =6, I =0.5mA 4.0 dB CE C f=1KHz, R =500Ω S h Classification FE Classification O Y G L h 70 ~ 140 120 ~ 240 200 ~ 400 350 ~ 700 FE ©2002 Rev. A2, September 2002
