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KSC2752-O-STU |KSC2752OSTU仙童N/a22478avaiNPN Epitaxial Silicon Transistor
KSC2752-O-STU |KSC2752OSTUfscN/a18640avaiNPN Epitaxial Silicon Transistor


KSC2752-O-STU ,NPN Epitaxial Silicon TransistorKSC2752KSC2752High SpeedHigh Voltage Swiching Industrial UseTO-1261NPN Epitaxial Silicon Transistor ..
KSC2752-O-STU ,NPN Epitaxial Silicon TransistorKSC2752KSC2752High SpeedHigh Voltage Swiching Industrial UseTO-1261NPN Epitaxial Silicon Transistor ..
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KSC2755-Y-MTF ,NPN Epitaxial Silicon TransistorKSC2755KSC2755RF AMP, FOR VHF &TV TUNER• Low NF, High G3PE• Forward AGC Capability to 30 dB• NF=2.0 ..
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KSC2752-O-STU
NPN Epitaxial Silicon Transistor
KSC2752 KSC2752 High Speed High Voltage Swiching Industrial Use TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 500 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 7 V EBO I Collector Current (DC) 0.5 A C I *Collector Current (Pulse) 1 A CP I Base Current (DC) 0.25 A B P Collector Dissipation (T =25°C) 1 W C a P Collector Dissipation (T =25°C) 10 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG * PW≤300μs, Duty Cycle≤10% Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) Collector-Emitter Sustaining Voltage I = 0.3A, I = 0.06A, L = 10mH 400 V CEO C B1 V (sus)1 Collector-Emitter Sustaining Voltage I = 0.3A, I = -I = 0.06A 450 V CEX C B1 B2 V (off) = -5V, L =10mH, Clamped BE V (sus)2 Collector-Emitter Sustaining Voltage I = 0.6A, I = 0.2A, I = -0.06A 400 V CEX C B1 B2 V (off) = -5V, L = 10mH, Clamped BE I Collector Cut-off Current V = 400V, I = 0 10 μA CBO CB E I Collector Cut-off Current V = 400V, R = 51Ω, T = 125°C 1 mA CER CE BE C I Collector Cut-off Current V = 400V, R (off) = -1.5V 10 μA CEX1 CE BE I Collector Cut-off Current V = 400V, R (off) = -1.5V 1mA CEX2 CE BE @ T = 125°C C I Emitter Cut-off Current V = 5V, I = 0 10 μA EBO EB C h * DC Current Gain V = 5V, I = 0.05A 20 80 FE1 CE C h V = 5V, I = 0.3A 10 FE2 CE C V (sat) * Collector-Emitter Saturation Voltage I = 0.3A, I = 0.06A 1 V CE C B V (sat) * Base-Emitter Saturation Voltage I = 0.3A, I = 0.06A 2 V BE C B t Turn ON Time V = 150V, I = 0.3A 1 μs ON CC C I = -I = 0.06A, R = 500Ω t Storage Time B1 B2 L 2.5 μs STG PW = 50μs, Duty Cycle≤2% t Fall Time 1 μs F * Pulse Test: PW≤350μs, Duty Cycle≤2% Pulsed h Classification FE Classification R O Y h 20 ~ 40 30 ~ 60 40 ~ 80 FE1 ©2000 Fairchild Semiconductor International Rev. A, February 2000
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