KSC2682-O-S ,NPN Epitaxial Silicon TransistorKSC2682KSC2682Audio Frequency Power Amplifier Complement to KSA1142TO-12611. Emitter 2.Collecto ..
KSC2682-Y-S ,NPN Epitaxial Silicon TransistorKSC2682KSC2682Audio Frequency Power Amplifier Complement to KSA1142TO-12611. Emitter 2.Collecto ..
KSC2688OS ,NPN Epitaxial Silicon TransistorKSC2688KSC2688Color TV Chroma Output & Video OutputTO-12611. Emitter 2.Collector 3.BaseNPN Ep ..
KSC2688OS ,NPN Epitaxial Silicon TransistorKSC2688KSC2688Color TV Chroma Output & Video OutputTO-12611. Emitter 2.Collector 3.BaseNPN Ep ..
KSC2688YS ,NPN Epitaxial Silicon TransistorKSC2688KSC2688Color TV Chroma Output & Video OutputTO-12611. Emitter 2.Collector 3.BaseNPN Ep ..
KSC2688YS ,NPN Epitaxial Silicon TransistorKSC2688KSC2688Color TV Chroma Output & Video OutputTO-12611. Emitter 2.Collector 3.BaseNPN Ep ..
L9177 ,Specific Functions, Engine Control IcsFeatures– Minimum guaranteed output current 500 mA - full step Supply voltage from 6 V to 18 V– Ro ..
L9222D ,QUAD INVERTING TRANSISTOR SWITCHFEATURESFigure 1. Packages■ OUTPUT VOLTAGE TO 50V■ OUTPUT CURRENT TO 1.2A■ VERY LOW SATURATION VOLT ..
L9305A ,DUAL HIGH CURRENT RELAY DRIVERblock diagram unless otherwise5 ambspecified)Symbol Parameter Test Conditions Min. Typ. Max. UnitV5 ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
L9308 ,DUAL LOW SIDE DRIVERBLOCK DIAGRAMOctober 1990 1/7This is advanced information on a new product now in development or un ..
KSC2682-O-S-KSC2682-Y-S
NPN Epitaxial Silicon Transistor
KSC2682 KSC2682 Audio Frequency Power Amplifier Complement to KSA1142 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 180 V CBO V Collector-Emitter Voltage 180 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 100 mA C P Collector Dissipation (T =25°C) 1.2 W C a P Collector Dissipation (T =25°C) 8 W C C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V = 180V, I = 0 1.0 μA CBO CB E I Emitter Cut-off Current V = 3V, I = 0 1.0 μA EBO EB C h * DC Current Gain V = 5V, I = 1mA 90 190 FE1 CE C h V = 5V, I = 10mA 100 200 320 FE2 CE C V (sat) * Collector-Emitter Saturation Voltage I = 50mA, I = 5mA 0.12 0.5 V CE C B V (sat) * Base-Emitter Saturation Voltage I = 50mA, I = 5mA 0.8 1.5 V BE C B f Current Gain Bandwidth Product V = 10V, I = 20mA 200 MHz T CE C C Output Capacitance V = 10V, I = 0 3.2 5.0 pF ob CB E f = 1MHz 4dB NF Noise Figure V = 10V, I = 1mA CE C R = 10KΩ, f = 1kHz S * Pulse Test: PW≤350μs, Duty Cycle≤2% h Classificntion FE Classification O Y h 100 ~ 200 160 ~ 320 FE2 ©2000 Fairchild Semiconductor International Rev. A, February 2000
