KSC2500 ,NPN (MEDIUM POWER AMPLIFIER LOW SATURATION)KSC2500KSC2500Medium Power Amplifier & Low SaturationTO-92L11. Emitter 2. Collector 3. BaseNPN Epi ..
KSC2682 ,NPN Epitaxial Silicon TransistorKSC2682KSC2682Audio Frequency Power Amplifier Complement to KSA1142TO-12611. Emitter 2.Collecto ..
KSC2682-O-S ,NPN Epitaxial Silicon TransistorKSC2682KSC2682Audio Frequency Power Amplifier Complement to KSA1142TO-12611. Emitter 2.Collecto ..
KSC2682-Y-S ,NPN Epitaxial Silicon TransistorKSC2682KSC2682Audio Frequency Power Amplifier Complement to KSA1142TO-12611. Emitter 2.Collecto ..
KSC2688OS ,NPN Epitaxial Silicon TransistorKSC2688KSC2688Color TV Chroma Output & Video OutputTO-12611. Emitter 2.Collector 3.BaseNPN Ep ..
KSC2688OS ,NPN Epitaxial Silicon TransistorKSC2688KSC2688Color TV Chroma Output & Video OutputTO-12611. Emitter 2.Collector 3.BaseNPN Ep ..
L9014SLT1G , General Purpose Transistors NPN Silicon
L9015SLT1 , General Purpose Transistors PNP Silicon
L9177 ,Specific Functions, Engine Control IcsFeatures– Minimum guaranteed output current 500 mA - full step Supply voltage from 6 V to 18 V– Ro ..
L9222D ,QUAD INVERTING TRANSISTOR SWITCHFEATURESFigure 1. Packages■ OUTPUT VOLTAGE TO 50V■ OUTPUT CURRENT TO 1.2A■ VERY LOW SATURATION VOLT ..
L9305A ,DUAL HIGH CURRENT RELAY DRIVERblock diagram unless otherwise5 ambspecified)Symbol Parameter Test Conditions Min. Typ. Max. UnitV5 ..
L9308 ,DUAL LOW SIDE DRIVERL9308DUAL LOW SIDE DRIVER. DARLINGTON OUTPUT STAGE. INPUT COMPARATOR WITH WIDE RANGECOMMON MODE OPE ..
KSC2500
NPN Epitaxial Silicon Transistor
KSC2500 KSC2500 Medium Power Amplifier & Low Saturation TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 30 V CES V Collector-Emitter Voltage 10 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current (DC) 2 A C I * Collector Current (Pulse) 5 A CP I Base Current 0.5 A B P Collector Power Dissipation 900 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG * PW≤10ms, Duty Cycle≤30% Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V =30V, I =0 100 nA CBO CB E I Emitter Cut-off Current V =6V, I =0 100 nA EBO EB C BV Collector-Emitter Breakdown Voltage I =10mA, I=0 10 V CBO C B BV Emitter-Base Breakdown Voltage I =1mA, I=0 6 V EBO E C h DC Current Gain V =1V, I =0.5A 140 600 FE 1 CE C h V =1V, I =2A 70 200 FE 2 CE C V (sat) Collector-Emitter Saturation Voltage I =2A, I =50mA 0.2 0.5 V CE C B V (on) Base-Emitter On Voltage V =1V, I =2A 0.86 1.5 V BE CE C f Current Gain Bandwidth Product V =1V, I =0.5A 150 MHz T CE C C Output Capacitance V =10V, I =0, f=1MHz 27 pF ob CB E h Classification FE1 Classification A B C D h 140 ~ 240 200 ~ 330 300 ~ 450 420 ~ 600 FE1 ©2002 Rev. A2, September 2002
