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KSC2310FairchildN/a500avaiNPN Epitaxial Silicon Transistor


KSC2310 ,NPN Epitaxial Silicon TransistorKSC2310KSC2310High Voltage Power Amplifier• Collector-Base Voltage : V =200VCBO• Current Gain Bandw ..
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KSC2310
NPN Epitaxial Silicon Transistor
KSC2310 KSC2310 High Voltage Power Amplifier • Collector-Base Voltage : V =200V CBO • Current Gain Bandwidth Product : f =100MHz T TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage 200 V CBO V Collector-Emitter Voltage 150 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 50 mA C P Collector Power Dissipation 800 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =100μA, I =0 200 V CBO C E BV Collector-Emitter Breakdown Voltage I =5mA, I =0 150 V CEO C B BV Emitter-Base Breakdown Voltage I =100μA, I=0 5 V EBO E C I Collector Cut-off Current V =200V, I=0 0.1 μA CBO CB E h DC Current Gain V =5V, I=10mA 40 240 FE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =1mA 0.5 V CE C B f Current Gain Bandwidth Product V =30V, I =10mA 100 MHz T CE C C Output Capacitance V =10V, I =0, f=1MHz 3.5 5 pF ob CB E h Classification FE Classification R O Y h 40 ~ 80 70 ~ 140 120 ~ 240 FE ©2001 Rev. A1, June 2001
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