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KSB798UTGN/a1000avaiPNP Epitaxial Silicon Transistor
KSB798GTFFAIRCHILDN/a32000avaiPNP Epitaxial Silicon Transistor
KSB798YTFFSCN/a2337avaiPNP Epitaxial Silicon Transistor


KSB798GTF ,PNP Epitaxial Silicon TransistorKSB798KSB798Audio Frequency Power Amplifier • Collector Current : I = -1AC• Collector Power Dissipa ..
KSB798YTF ,PNP Epitaxial Silicon TransistorKSB798KSB798Audio Frequency Power Amplifier • Collector Current : I = -1AC• Collector Power Dissipa ..
KSB834 ,PNP (LOW FREQUENCY POWER AMPLIFIER)
KSB834-Y ,PNP Epitaxial Silicon TransistorKSB834KSB834Low Frequency Power Amplifier• Complement to KSD880TO-22011.Base 2.Collector 3.Em ..
KSB834-Y ,PNP Epitaxial Silicon TransistorKSB834KSB834Low Frequency Power Amplifier• Complement to KSD880TO-22011.Base 2.Collector 3.Em ..
KSB834YTU ,PNP Epitaxial Silicon TransistorKSB834KSB834Low Frequency Power Amplifier• Complement to KSD880TO-22011.Base 2.Collector 3.Em ..
L88M09T ,Voltage Regulators: 9V low-saturation voltage regulatorFeatures.Output voltage L88M33T: 3.3 V L88M05T: 5 VL88M09T: 9 V L88M12T: 12 V.500 mAoutput current. ..
L88M33T ,Voltage Regulators: 3.3V low-saturation voltage regulatorOperating Characteristics at Tj = 25°C, V =8V,I = 500 mA, C = 100μF, C = 1μF,IN O OUT INsee specifi ..
L88MS05T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionOperating Characteristics at Tj = 25°C, V =7V,I = 500 mA, C = 100μF, C ,Cn=1μF,IN O OUT INsee speci ..
L88MS05T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionPin AssignmentSet size can be miniaturized with compact TP-5H powerpackage..Surface mounting on boa ..
L88MS09T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionOperating Characteristics at Tj = 25°C, V =8V,I = 500 mA, C = 100μF, C ,Cn=1μF,IN O OUT INsee speci ..
L88MS12T ,4 to 12 V, 0.5 A Low Dropout Voltage Regulator with On/Off FunctionOperating Characteristics at Tj = 25°C, V =9V,I = 500 mA, C = 100μF, C ,Cn=1μF,IN O OUT INsee speci ..


KSB798-KSB798GTF-KSB798YTF
PNP Epitaxial Silicon Transistor
KSB798 KSB798 Audio Frequency Power Amplifier • Collector Current : I = -1A C • Collector Power Dissipation : P = 2W C SOT-89 1 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage -30 V CBO V Collector-Emitter Voltage -25 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current (DC) -1.0 A C I * Collector Current (Pulse) -1.5 A CP P Collector Power Dissipation 2.0 W C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG * PW≤10ms, Duty cycle≤50% Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -100μA, I =0 -30 V CBO C E BV Collector-Emitter Breakdown Voltage I = -1mA, I =0 -25 V CEO C B BV Emitter-Base Breakdown Voltage I = -100μA, I =0 -5 V EBO E C I Collector Cut-off Current V = -30V, I =0 -0.1 μA CBO CB E I Emitter Cut-off Current V = -5V, I =0 -0.1 μA EBO EB C h DC Current Gain V = -1V, I = -0.1A 90 400 FE1 CE C h V = -1V, I = -1.0A 50 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = -1.0A, I = -0.1A -0.4 V CE C B V (sat) Base-Emitter Saturation Voltage I = -1.0A, I = -0.1A -1.2 V BE C B V (on) Base-Emitter On Voltage V = -6V, I = -10mA -0.6 -0.7 V BE CE C f Current Gain Bandwidth Product V = -6V, I = -10mA 110 MHz T CE C C Output Capacitance V = -6V, I =0, f=1MHz 18 pF ob CB E h Classification FE Classification O Y G h 90 ~ 180 135 ~ 270 200 ~ 400 FE1 Marking SLX h Grade FE ©2001 Rev. A1, June 2001
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