KSB546-Y ,PNP Epitaxial Silicon TransistorKSB546KSB546TV Vertical Deflection Output ..
KSB546YTU ,PNP Epitaxial Silicon TransistorKSB546KSB546TV Vertical Deflection Output ..
KSB564A ,PNP Epitaxial Silicon TransistorKSB564AKSB564AAudio Frequency Power Amplifier • Complement to KSD471A• Collector Current : I = -1AC ..
KSB564ACYTA ,PNP Epitaxial Silicon TransistorKSB564AKSB564AAudio Frequency Power Amplifier • Complement to KSD471A• Collector Current : I = -1AC ..
KSB564AC-YTA ,PNP Epitaxial Silicon TransistorKSB564AKSB564AAudio Frequency Power Amplifier • Complement to KSD471A• Collector Current : I = -1AC ..
KSB564AO , Audio Frequency Power Amplifier
L8550HPLT1G , General Purpose Transistors PNP Silicon Epitaxial planar type.
L8550HRLT1G , General Purpose Transistors PNP Silicon Epitaxial planar type.
L8550QLT1 , General Purpose Transistors PNP Silicon
L8550QLT1 , General Purpose Transistors PNP Silicon
L88M09T ,Voltage Regulators: 9V low-saturation voltage regulatorFeatures.Output voltage L88M33T: 3.3 V L88M05T: 5 VL88M09T: 9 V L88M12T: 12 V.500 mAoutput current. ..
L88M33T ,Voltage Regulators: 3.3V low-saturation voltage regulatorOperating Characteristics at Tj = 25°C, V =8V,I = 500 mA, C = 100μF, C = 1μF,IN O OUT INsee specifi ..
KSB546-Y-KSB546YTU
PNP Epitaxial Silicon Transistor
KSB546 KSB546 TV Vertical Deflection Output Collector-Base Voltage : V = -200V CBO Collector Current : l = -2A C Collector Dissipation : P = 25W (T =25°C) C C Complement to KSD401 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage - 200 V CBO V Collector-Emitter Voltage - 150 V CEO V Emitter-Base Voltage - 5 V EBO I Collector Current(DC)Y - 2 A C P Collector Dissipation (T =25°C) 25 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = - 500μA, I = 0 - 200 V CBO C E BV Collector-Emitter Breakdown Voltage I = - 10mA, I = 0 - 150 V CEO C B BV Emitter-Base Breakdown Voltage I = - 500uA, I = 0 - 5 V EBO E C I Collector Cut-off Current V = - 150V, I = 0 - 50 μA CBO CB E h DC Current Gain V = - 10V, I = - 0.4A 40 240 FE CE E V (sat) Collector-Emitter Saturation Voltage I = - 500mA, I = - 50mA - 1 V CE C B f Current Gain Bandwidth Product V = - 10V, I = - 0.4A 5 MHz T CE C h Classification FE Classification R O Y h 40 ~ 80 70 ~ 140 120 ~ 240 FE ©2000 Fairchild Semiconductor International Rev. A, February 2000
