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KSB1121-KSB1121-STF-KSB1121-TTF Fast Delivery,Good Price
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KSB1121UTGN/a1000avaiPNP Epitaxial Planar Silicon Transistor
KSB1121-STF |KSB1121STFSAMSUNGN/a46000avaiPNP Epitaxial Planar Silicon Transistor
KSB1121-STF |KSB1121STFFAIRCHILDN/a4000avaiPNP Epitaxial Planar Silicon Transistor
KSB1121-TTF |KSB1121TTFFAIRCHILN/a4000avaiPNP Epitaxial Planar Silicon Transistor


KSB1121-STF ,PNP Epitaxial Planar Silicon TransistorApplications• Low Collector-Emitter Saturation Voltage• Large Current Capacity and Wide SOA• Fast S ..
KSB1121-STF ,PNP Epitaxial Planar Silicon TransistorApplications• Low Collector-Emitter Saturation Voltage• Large Current Capacity and Wide SOA• Fast S ..
KSB1121-TTF ,PNP Epitaxial Planar Silicon TransistorKSB1121KSB1121High Current Driver
KSB1151YS ,PNP Epitaxial Silicon TransistorKSB1151KSB1151Feature Low Collector-Emitter Saturation Voltage Large Collector Current High Powe ..
KSB1151YSTU ,PNP Epitaxial Silicon TransistorKSB1151KSB1151Feature Low Collector-Emitter Saturation Voltage Large Collector Current High Powe ..
KSB1366YTU ,PNP Epitaxial Silicon TransistorKSB1366KSB1366LOW FREQUENCY POWER AMPLIFIER Complement to KSD2012TO-220F11.Base 2.Collector ..
L8550HPLT1G , General Purpose Transistors PNP Silicon Epitaxial planar type.
L8550HRLT1G , General Purpose Transistors PNP Silicon Epitaxial planar type.
L8550QLT1 , General Purpose Transistors PNP Silicon
L8550QLT1 , General Purpose Transistors PNP Silicon
L88M09T ,Voltage Regulators: 9V low-saturation voltage regulatorFeatures.Output voltage L88M33T: 3.3 V L88M05T: 5 VL88M09T: 9 V L88M12T: 12 V.500 mAoutput current. ..
L88M33T ,Voltage Regulators: 3.3V low-saturation voltage regulatorOperating Characteristics at Tj = 25°C, V =8V,I = 500 mA, C = 100μF, C = 1μF,IN O OUT INsee specifi ..


KSB1121-KSB1121-STF-KSB1121-TTF
PNP Epitaxial Planar Silicon Transistor
KSB1121 KSB1121 High Current Driver Applications • Low Collector-Emitter Saturation Voltage • Large Current Capacity and Wide SOA • Fast Switching Speed • Complement to KSD1621 SOT-89 1 1. Base 2. Collector 3. Emitter PNP Epitaxial Planar Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage -30 V CBO V Collector-Emitter Voltage -25 V CEO V Emitter-Base Voltage -6 V EBO I Collector Current -2 A C P Collector Power Dissipation 500 mW C P * 1.3 W C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG * Mounted on Ceramic Board (250mm2 x 0.8mm) Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -10μA, I = 0 -30 V CBO C E BV Collector-Emitter Breakdown Voltage I = -1mA, I = 0 -25 V CEO C B BV Emitter-Base Breakdown Voltage I = -10μA, I = 0 -6 V EBO E C I Collector Cut-off Current V = -20V, I =0 -100 nA CBO CB E I Emitter Cut-off Current V = -4V, I = 0 -100 nA EBO BE C h DC Current Gain V = -2V, I = -0.1A 100 560 FE1 CE C h V = -2V, I = -1.5A 65 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = -1.5A, I = -75mA -0.35 -0.6 V CE C B V (sat) Base-Emitter Saturation Voltage I = -1.5A, I = -75mA -0.85 -1.2 V BE C B f Current Gain Bandwidth Product V = -10V, I = -50mA 150 MHz T CE C C Output Capacitance V = -10V, I =0, f=1MHz 32 pF ob CB E t * Turn On Time V = -12V, V = -5V 60 ns ON CC BE I =-I =-25mA t * Storage Time B1 B2 350 ns STG I = -500mA, R =24Ω C L t * Fall time 25 ns F * Pulse Test: PW≤20μs, Duty Cycle≤1% h Classification FE Classification R S T U h 100 ~ 200 140 ~ 280 200 ~ 400 280 ~ 560 FE1 Marking SZX h Grade FE ©2001 Rev. A1, June 2001
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