KSB1015YTU ,PNP Epitaxial Silicon TransistorKSB1015KSB1015Low Frequency Power Amplifier Low Collector Emitter Saturation Voltage Complement t ..
KSB1015-YTU ,PNP Epitaxial Silicon TransistorKSB1015KSB1015Low Frequency Power Amplifier Low Collector Emitter Saturation Voltage Complement t ..
KSB1015-YTU ,PNP Epitaxial Silicon TransistorKSB1015KSB1015Low Frequency Power Amplifier Low Collector Emitter Saturation Voltage Complement t ..
KSB1017YTU ,PNP Epitaxial Silicon TransistorApplications Complement to KSD1408TO-220F11.Base 2.Collector 3.EmitterPNP Silicon Epitaxial ..
KSB1116GTA ,PNP Epitaxial Silicon TransistorKSB1116/1116AKSB1116/1116AAudio Frequency Power Amplifier & Medium Speed Switching• Complement to K ..
KSB1116GTA ,PNP Epitaxial Silicon TransistorKSB1116/1116AKSB1116/1116AAudio Frequency Power Amplifier & Medium Speed Switching• Complement to K ..
L8202 ,MULTIFUNCTION ANALOG ASICFEATURESFigure 1. Package■ Flexible Motor Driver configuration– 4 DC Motor drivers (1.5A Peak Curre ..
L8229 , Dual DMOS full bridge stepper/DC motor driver
L8229 , Dual DMOS full bridge stepper/DC motor driver
L8550HPLT1G , General Purpose Transistors PNP Silicon Epitaxial planar type.
L8550HRLT1G , General Purpose Transistors PNP Silicon Epitaxial planar type.
L8550QLT1 , General Purpose Transistors PNP Silicon
KSB1015YTU-KSB1015-YTU
PNP Epitaxial Silicon Transistor
KSB1015 KSB1015 Low Frequency Power Amplifier Low Collector Emitter Saturation Voltage Complement to KSD1406 TO-220F 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage - 60 V CBO V Collector-Emitter Voltage - 60 V CEO V Emitter-Base Voltage - 7 V EBO I Collector Current(DC) - 3 A C I Base Current - 0.5 A B P Collector Dissipation (T =25°C) 25 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Emitter Breakdown Voltage I = - 50mA, I = 0 - 60 V CEO C B I Collector Cut-off Current V = - 60V, I = 0 - 100 μA CBO CB E I Emitter Cut-off Current V = - 7V, I = 0 - 100 μA EBO EB C h DC Current Gain V = - 5V, I = - 0.5A 60 200 FE1 CE C h V = - 5V, I = - 3A 20 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = - 3A, I = - 0.3A - 0.5 - 1 V CE C B V (on) Base-Emitter ON Voltage V = - 5V, I = - 0.5A - 0.7 - 1 V BE CE C f Current Gain Bandwidth Product V = - 5V, I = - 0.5A 9 MHz T CE C C Output Capacitance V = - 10V, f = 1MHz 150 pF ob CB t Turn ON Time V = - 30V, I = - 1A 0.4 μs ON CC C I = -I = -0.2A t Storage Time B1 B2 1.7 μs STG R = 30Ω L t Fall Time 0.5 μs F h Classification FE Classification O Y h 60 ~ 120 100 ~ 200 FE1 ©2000 Fairchild Semiconductor International Rev. A, February 2000
