KSA992 ,PNP Epitaxial Silicon TransistorKSA992KSA992Audio Frequency Low Noise Amplifier• Complement to KSC1845TO-9211. Emitter 2. Collect ..
KSA992PTA ,PNP Epitaxial Silicon TransistorKSA992KSA992Audio Frequency Low Noise Amplifier• Complement to KSC1845TO-9211. Emitter 2. Collect ..
KSB1015YTU ,PNP Epitaxial Silicon TransistorKSB1015KSB1015Low Frequency Power Amplifier Low Collector Emitter Saturation Voltage Complement t ..
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KSB1015-YTU ,PNP Epitaxial Silicon TransistorKSB1015KSB1015Low Frequency Power Amplifier Low Collector Emitter Saturation Voltage Complement t ..
KSB1017YTU ,PNP Epitaxial Silicon TransistorApplications Complement to KSD1408TO-220F11.Base 2.Collector 3.EmitterPNP Silicon Epitaxial ..
L8202 ,MULTIFUNCTION ANALOG ASICBlock DiagramPW PW PWM M M g g gen. en. en.L820 L8202 2D D DC C C m m mo o otor tor torDC DC DC M M ..
L8202 ,MULTIFUNCTION ANALOG ASICFEATURESFigure 1. Package■ Flexible Motor Driver configuration– 4 DC Motor drivers (1.5A Peak Curre ..
L8229 , Dual DMOS full bridge stepper/DC motor driver
L8229 , Dual DMOS full bridge stepper/DC motor driver
L8550HPLT1G , General Purpose Transistors PNP Silicon Epitaxial planar type.
L8550HRLT1G , General Purpose Transistors PNP Silicon Epitaxial planar type.
KSA992-KSA992PTA
PNP Epitaxial Silicon Transistor
KSA992 KSA992 Audio Frequency Low Noise Amplifier • Complement to KSC1845 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage -120 V CBO V Collector-Emitter Voltage -120 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -50 mA C I Base Current -10 mA B P Collector Power Dissipation 500 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V = -120V, I =0 -50 nA CBO CB E I Collector Cur-off Current V = -100V, I =0 -1 μA CEO CE B I Emitter Cut-off Current V = -5mA, I =0 -50 nA EBO EB C h DC Current Gain V = -6V, I = -0.1mA 150 500 FE1 CE C h V = -6V, I = -1mA 200 500 800 FE2 CE C V (on) Base-Emitter On Voltage V = -6V, I = -1mA -0.55 -0.61 -0.65 V BE CE C V (sat) Collector-Emitter Saturation Voltage I = -10mA, I = -1mA -0.09 -0.3 V CE C B f Current Gain Bandwidth Product V = -6V, I = -1mA 50 100 MHz T CE C C Output Capacitance V = -30V, I =0, f=1MHz 2 3 pF ob CB E NV Noise Voltage V = -5.0V, I = -1.0mA, 25 40 mV CE C =100KW, G = 80dB, R G V f = 10Hz to 1.0KHz h Classification FE2 Classification P F E h 200 ~ 400 300 ~ 600 400 ~ 800 FE2 ©2004 Rev. B2, August 2004
