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KSA733C-GTA |KSA733CGTAFAIRCHILDN/a2000avaiPNP Epitaxial Silicon Transistor
KSA733YTAFSCN/a16000avaiPNP Epitaxial Silicon Transistor


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KSA733C-GTA-KSA733YTA
PNP Epitaxial Silicon Transistor
KSA733 KSA733 Low Frequency Amplifier • Collector-Base Voltage : V = -60V CBO • Complement to KSC945 • Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage -60 V CBO V Collector-Emitter Voltage -50 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -150 mA C P Collector Power Dissipation 250 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -100μA, I=0 -60 V CBO C E BV Collector-Emitter Breakdown Voltage I = -10mA. I=0 -50 V CEO C B BV Emitter-Base Breakdown Voltage I = -10μA. I=0 - 5 V EBO E C I Collector Cut-off Current V = --60V, I=0 -100nA CBO CB E I Emitter Cut-off Current V = -5V, I=0 -100nA EBO EB C h DC Current Gain V = -6V, I = -1mA 40 700 FE CE C V (sat) Collector-Emitter Saturation Voltage I = -100mA, I = -10mA -0.18 -0.3 V CE C B V (on) Base-Emitter On Voltage V = -6V, I = -1mA -0.50 -0.62 -0.80 V BE CE C f Current Gain Bandwidth Product V = -6V, I = -10mA 50 180 MHz T CE C C Output Capacitance V = -10V, I = 0, f=1MHz 2.8 pF ob CB E NF Noise Figure V = -6V, I = -0.3mA 6.0 20 dB CE C f=1MHz, Rs=10kΩ h Classification FE Classification R O Y G L h 40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400 350 ~ 700 FE ©2002 Rev. A2, September 2002
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