KSA473YTU ,PNP Epitaxial Silicon TransistorKSA473KSA473Low Frequency Power AmplifierPower Regulator Collector Current : I = -3AC Collector D ..
KSA539 ,PNP Epitaxial Silicon TransistorKSA539KSA539Low Frequency Amplifier• Complement to KSC815• Collector-Base Voltage: V = -60VCBO• Col ..
KSA539 ,PNP Epitaxial Silicon TransistorKSA539KSA539Low Frequency Amplifier• Complement to KSC815• Collector-Base Voltage: V = -60VCBO• Col ..
KSA539Y , Low Frequency Amplifier
KSA539-Y , Low Frequency Amplifier
KSA539-Y , Low Frequency Amplifier
L800BB12VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB12VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB70VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB90VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB90VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BT70VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
KSA473YTU
PNP Epitaxial Silicon Transistor
KSA473 KSA473 Low Frequency Power Amplifier Power Regulator Collector Current : I = -3A C Collector Dissipation : P = 10W (T =25°C) C C Complement to KSC1173 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Ratings Units V Collector-Base Voltage - 30 V CBO V Collector-Emitter Voltage - 30 V CEO V Emitter-Base Voltage - 5 V EBO I Collector Current - 3 A C P Collector Dissipation (T =25°C) 10 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = - 500μA, I = 0 - 30 V CBO C E BV Collector-Emitter Breakdown Voltage I = - 10mA, I = 0 - 30 V CEO C B BV Emitter-Base Breakdown Voltage I = - 1mA, I = 0 - 5 V EBO E C I Collector Cut-off Current V = - 20V, I = 0 - 1.0 μA CBO CB E I Emitter Cut-off Current V = - 5V, I = 0 - 1.0 μA EBO EB C h DC Current Gain V = - 2V, I = - 0.5A 70 240 FE1 CE C h V = - 2V, I = - 2.5A 25 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = - 2A, I = - 0.2A - 0.3 - 0.8 V CE C B V (on) Base-Emitter ON Voltage V = - 2V, I = - 0.5A - 0.75 - 1.0 V BE CE C f Current Gain Bandwidth Product V = - 2V, I = - 0.5A 100 MHz T CE C C Output Capacitance V = - 10V, I = 0, 40 pF ob CB E f = 1MHz h Classification FE Classification O Y h 70 ~ 140 120 ~ 240 FE1 ©2000 Fairchild Semiconductor International Rev. A, February 2000
