KSA1220A-Y-S ,PNP Epitaxial Silicon TransistorKSA1220/1220AKSA1220/1220AAudio Frequency Power AmplifierHigh Frequency Power Amplifier• Complement ..
KSA1220A-Y-S ,PNP Epitaxial Silicon TransistorKSA1220/1220AKSA1220/1220AAudio Frequency Power AmplifierHigh Frequency Power Amplifier• Complement ..
KSA1220AYSTSTU ,PNP Epitaxial Silicon TransistorKSA1220/1220AKSA1220/1220AAudio Frequency Power AmplifierHigh Frequency Power Amplifier• Complement ..
KSA1281-Y , Audio Power Amplifier
KSA1281YTA ,PNP Epitaxial Silicon TransistorKSA1281KSA1281Audio Power Amplifier• Collector Power Dissipation : P =1WC• 3 Watt Output Applicatio ..
KSA1298 ,PNP Epitaxial Silicon TransistorKSA1298KSA1298Low Frequency Power Amplifier 3• Complement to KSC32652SOT-2311. Base 2. Emitter ..
L800BB12VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB12VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB70VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB90VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BB90VI , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
L800BT70VC , 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
KSA1220AOS-KSA1220A-Y-S-KSA1220AYSTSTU
PNP Epitaxial Silicon Transistor
KSA1220/1220A KSA1220/1220A Audio Frequency Power Amplifier High Frequency Power Amplifier • Complement to KSC2690/KSC2690A TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Ratings Units V Collector-Base Voltage : KSA1220 - 120 V CBO : KSA1220A - 160 V V Collector-Emitter Voltage : KSA1220 - 120 V CEO : KSA1220A - 160 V V Emitter-Base Voltage - 5 V EBO I Collector Current (DC) - 1.2 A C I *Collector Current (Pulse) - 2.5 A CP I Base Current - 0.3 A B P Collector Dissipation (T =25°C) 1.2 W C a P Collector Dissipation (T =25°C) 20 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG * PW≤10ms, Duty Cycle≤50% Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V = - 120V, I = 0 - 1 μA CBO CB E I Emitter Cut-off Current V = - 3V, I = 0 - 1 μA EBO EB C h * DC Current Gain V = - 5V, I = - 5mA 35 150 FE1 CE C h V = - 5V, I = - 0.3A 60 140 320 FE2 CE C V (sat) * Collector-Emitter Saturation Voltage I = - 1A, I = - 0.2A - 0.4 - 0.7 V CE C B V (sat) * Base-Emitter Saturation Voltage I = - 1A, I = - 0.2A - 1 - 1.3 V BE C B f Current Gain Bandwidth Product V = - 5V, I = - 0.2A 175 MHz T CE C C Output Capacitance V = - 10, I = 0 26 pF ob CB E f = 1MHz * Pulse Test: PW≤350μs, Duty Cycle≤2% Pulsed h Classification FE Classification R O Y h 60 ~ 120 100 ~ 200 160 ~ 320 FE2 ©2001 Rev. A1, June 2001
