| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| KM6T1008C2E-DL55 |
SAMSUNG |
N/a |
4000 |
 |
|
KM7101IT5TR3 ,RRIO AmplifierElectrical Specifications(V = +2.7V, G = 2, R = 10kΩ to V /2, R = 5kΩ ; unless otherwise noted)s L ..
KMA5D8DP20Q , FLP-8 PACKAGE
KMB012N30QA , N-Ch Trench MOSFET
KMB6D0DN30QA , Dual N-Ch Trench MOSFET
KMB6D0DN30QA , Dual N-Ch Trench MOSFET
L2SA812SLT1G , General Purpose Transistors Epitaxial planar type.
L2SB1197KQLT1G , Low Frequency Transistor PNP Silicon
L2SC2412KRLT1G , General Purpose Transistors NPN Silicon
