| Block Diagram#3 VCC#1 DRAIN32V5V InternalVref bias SFETGoodlogic#5 Soft StartOSC5VSQR−#4 FBL.E.B2.5R5µ A 1mA+1R9V0.1V+S #2 GND7.5V −QR+ Thermal S/DPower on reset25V −OVER VOLTAGE S/DRev.1.0.22001 Fairchild Semiconductor CorporationKA1M0680B/KA1M0680RB/KA1H0680B/KA1H0680RFBAbsolute Maximum RatingsParameter Symbol Value Unit(1)Maximum Drain voltage V 800 VD,MAXDrain Gate voltage (R =1MΩ)V 800 VGS DGRGate source (GND) voltage VGS ±30 V(2)Drain current pulsed I 24.0 ADM DC (3)Single pulsed avalanche energy E 455 mJAS (4)Avalanche current I 16 AASContinuous drain current (T =25°C) I 6.0 AC D DCContinuous drain current (T =100°C) I 4.0 AC D DCMaximum Supply voltage V 30 VCC,MAXInput voltage range V −0.3 to V VFB SDP 150 WDTotal power dissipationDerating 1.21 W/°COperating ambient temperature T −25 to +85 °CAStorage temperature T −55 to +150 °CSTGNotes:1. Tj=25°C to 150°C2. Repetitive rating: Pulse width limited by maximum junction temperature3. L=24mH, V =50V, R =25Ω , starting Tj=25°CDD G4. L=13µ H, starting Tj=25°C2KA1M0680B/KA1M0680RB/KA1H0680B/KA1H0680RFB |
