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KA1H0265RTU from FAIRCHILD, Fairchild Semiconductor 1630pcs , TO-220-4P,RECOMMEND NEW DEVICE KA5H0265RC
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KA1H0265RTU FAIRCHILD N/a 1630
Block Diagram#3 VCC#2 DRAIN32V5V InternalSFETVref biasGoodlogicOSC9V SQ5µ A1mAR−#4 FBL.E.B 2.5R+1R0.1V+S− #1 GND7.5VQR+ Thermal S/DPower on reset25V −OVER VOLTAGE S/DRev.1.0.22003 Fairchild Semiconductor CorporationKA1M0265R/KA1H0265RAbsolute Maximum RatingsParameter Symbol Value Unit(1)Maximum Drain Voltage V 650 VD,MAXDrain-Gate Voltage (R =1MΩ)V 650 VGS DGRGate-Source (GND) Voltage V ±30 VGS(2)Drain Current Pulsed I 8.0 ADM DC (3)Single Pulsed Avalanche Energy E 68 mJASContinuous Drain Current (T =25°C) I 2.0 AC D DCContinuous Drain Current (T =100°C) I 1.3 AC D DCMaximum Supply Voltage V 30 VCC,MAXInput Voltage Range V -0.3 to V VFB SDP 42 WDTotal Power DissipationDarting 0.33 W/°COperating Ambient Temperature T -25 to +85 °CAStorage Temperature T -55 to +150 °CSTGNotes:1. T = 25°C to 150°Cj2. Repetitive rating: Pulse width limited by maximum junction temperature3. L = 51mH, V = 50V, R = 25Ω , starting T = 25°CDD G j2KA1M0265R/KA1H0265R
KA1H0280R SEC

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