| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| K4E641612E-TL60 |
SAMSUNG |
N/a |
1871 |
 |
|
K4E661612C-TL50 , 4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4H280438D-TCA0 , 128Mb DDR SDRAM
K4H280438D-TCB0 , 128Mb DDR SDRAM
K4H280838B-TCA0 , 128Mb DDR SDRAM
K4H280838C-TCB0 , 128Mb DDR SDRAM
KF25BDT ,VERY LOW DROP VOLTAGE REGULATOR WITH INHIBITELECTRICAL CHARACTERISTICS FOR KF12 (refer to the test circuits, T = 25°C, C =0.1 μF,j IC =2.2μF un ..
KF25BD-TR ,VERY LOW DROP VOLTAGE REGULATOR WITH INHIBITELECTRICAL CHARACTERISTICS FOR KF15 (refer to the test circuits, T = 25°C, C =0.1 μF,j IC =2.2μF un ..
KF25BDT-TR ,VERY LOW DROP VOLTAGE REGULATOR WITH INHIBITABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV DC Input Voltage-0.5 to 20 VII Output CurrentI ..
