| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| K4E641612D-TL60 |
SAMSUNG |
N/a |
967 |
 |
|
| K4E641612D-TL60 |
SEC |
N/a |
1062 |
|
|
K4E661612C-TL50 , 4M x 16bit CMOS Dynamic RAM with Extended Data Out
K4H280438D-TCA0 , 128Mb DDR SDRAM
K4H280438D-TCB0 , 128Mb DDR SDRAM
K4H280838B-TCA0 , 128Mb DDR SDRAM
K4H280838C-TCB0 , 128Mb DDR SDRAM
KF15BDT-TR ,VERY LOW DROP VOLTAGE REGULATOR WITH INHIBITELECTRICAL CHARACTERISTICS FOR KF27 (refer to the test circuits, T = 25°C, C =0.1μF,j IC =2.2 μF un ..
KF25 ,VERY LOW DROP VOLTAGE REGULATORS WITH INHIBITELECTRICAL CHARACTERISTICS FOR KF15 (refer to the test circuits, Tj =25 C,C = 0.1 μF, C = 2.2 μF un ..
KF25BD ,VERY LOW DROP VOLTAGE REGULATOR WITH INHIBITELECTRICAL CHARACTERISTICS FOR KF27 (refer to the test circuits, T = 25°C, C =0.1μF,j IC =2.2 μF un ..
