Partno |
Mfg |
Dc |
Qty |
Available | Descript |
K30-GR |
Toshiba|TOSHIBA |
N/a |
5000 |
|
|
K3296 ,MOS FIELD EFFECT TRANSISTORELECTRICAL CHARACTERISTICS(TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITDrai ..
K3351K ,TECHNIK - HIGH RELIABILITY FOR LOW COST
K3610 , Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting)
K4B1G0446D-HCF7 , 1Gb D-die DDR3 SDRAM Specification
K4B1G0446D-HCF8 , 1Gb D-die DDR3 SDRAM Specification
KCQ20A04 , Similar to TO-247C(TO-3P)Case, Low Forward Voltage Drop, High Surge Current Capability
KCQ30A03L , Schottky Barrier Diode
KCQ30A03L , Schottky Barrier Diode