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JDV2S09S
Diode Silicon Epitaxial Planar Type VCO for UHF Band Radio
JDV2S09S TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S09S VCO for UHF band High capacitance ratio: C1V/C4V = 2.1 (typ.) Low series resistance: rs = 0.33 Ω (typ.) This device is suitable for use in a small-size tuner.
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C)
Note: Signal level when capacitance is measured. Vsig � 500 mVrms
Marking Unit: mm
Weight: 0.0011 g (typ.)
