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JDH2S02FS
High frequency Schottky barrier diode
JDH2S02FS TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
JDH2S02FS UHF Band Mixer Suitable for reducing set size through the use of a two-pin small
package supporting high-density mounting
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C) Note: Signal level when capacitance is measured: Vsig = 20 mVrms
Marking Caution This device is sensitive to electrostatic discharge. Operators should wear antistatic clothing, and containers and
other objects that come into direct contact with the product should be made of antistatic materials.
Unit: mm
Weight: 0.0006 g (typ.)
