Partno |
Mfg |
Dc |
Qty |
Available | Descript |
JCP8062 |
|
N/a |
743 |
|
|
JDH2S01T ,Diode Silicon Epitaxial Schottky Barrier Type UHF Band MixerJDH2S01T TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH2S01T UHF Band Mixer Unit: mm ..
JDH2S02FS ,High frequency Schottky barrier diodeElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. MaxUnitForward ..
JDH3D01S ,High frequency Schottky barrier diodeElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Forwa ..
JDP2S01E ,Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator ApplicationsJDP2S01E TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S01E UHF~VHF Band RF Attenuator
JDP2S01E ,Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator ApplicationsApplications Unit: mm Suitable for reducing set’s size as a result from enabling high-density ..
K817P3 ,OptocouplersElectrical CharacteristicsT = 25 °C, unless otherwise specifiedambMinimum and maximum values are te ..
K817P4 ,OptocouplersRev. 1.7, 26-Oct-04 3K817P/ K827PH/ K847PHVishay SemiconductorsSwitching CharacteristicsParameter T ..
K817P5 ,OptocouplersAbsolute Maximum RatingsT = 25 °C, unless otherwise specifiedambStresses in excess of the