| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| JCP8058-2 |
RENESAS |
N/a |
700 |
 |
|
JDH2S01T ,Diode Silicon Epitaxial Schottky Barrier Type UHF Band MixerJDH2S01T TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH2S01T UHF Band Mixer Unit: mm ..
JDH2S02FS ,High frequency Schottky barrier diodeElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. MaxUnitForward ..
JDH3D01S ,High frequency Schottky barrier diodeElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Forwa ..
JDP2S01E ,Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator ApplicationsJDP2S01E TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S01E UHF~VHF Band RF Attenuator
JDP2S01E ,Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator ApplicationsApplications Unit: mm Suitable for reducing set’s size as a result from enabling high-density ..
K817P1 ,Optocouplersabsolute Maximum Ratings can cause permanent damage to the device. Functional operation of the devi ..
K817P2 ,Optocouplers Document Number 835224 Rev. 1.7, 26-Oct-04K817P/ K827PH/ K847PHVishay SemiconductorsTypical Charac ..
K817P3 ,OptocouplersElectrical CharacteristicsT = 25 °C, unless otherwise specifiedambMinimum and maximum values are te ..
