Partno |
Mfg |
Dc |
Qty |
Available | Descript |
JCC5016 |
JVC |
N/a |
20 |
|
|
JDH2S01T ,Diode Silicon Epitaxial Schottky Barrier Type UHF Band MixerJDH2S01T TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH2S01T UHF Band Mixer Unit: mm ..
JDH2S02FS ,High frequency Schottky barrier diodeElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. MaxUnitForward ..
JDH3D01S ,High frequency Schottky barrier diodeElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Forwa ..
JDP2S01E ,Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator ApplicationsJDP2S01E TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S01E UHF~VHF Band RF Attenuator
JDP2S01E ,Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator ApplicationsApplications Unit: mm Suitable for reducing set’s size as a result from enabling high-density ..
K7N403609B-QC20 , 128Kx36 & 256Kx18 Pipelined NtRAMTM
K7N801801B-QC16 , 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM
K7N801809B-QC25 , 256Kx36 & 512Kx18-Bit Flow Through NtRAM