| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| JCB160808-600 |
|
N/a |
15840 |
 |
|
JDH2S01T ,Diode Silicon Epitaxial Schottky Barrier Type UHF Band MixerJDH2S01T TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH2S01T UHF Band Mixer Unit: mm ..
JDH2S02FS ,High frequency Schottky barrier diodeElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. MaxUnitForward ..
JDH3D01S ,High frequency Schottky barrier diodeElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Forwa ..
JDP2S01E ,Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator ApplicationsJDP2S01E TOSHIBA Diode Silicon Epitaxial Pin Type JDP2S01E UHF~VHF Band RF Attenuator
JDP2S01E ,Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator ApplicationsApplications Unit: mm Suitable for reducing set’s size as a result from enabling high-density ..
K7N323645M-FC16 , 1Mx36 & 2Mx18 Pipelined NtRAM
K7N323645M-QC16 , 1Mx36 & 2Mx18 Pipelined NtRAM
K7N401801B-QC13 , 128Kx36 & 256Kx18 Pipelined NtRAMTM
