IC Phoenix
 
Home ›  II31 > IRFM140-JANTXV2N7218,100V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
IRFM140-JANTXV2N7218 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
JANTXV2N7218IRN/a3avai100V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
IRFM140IR N/a15avai100V Single N-Channel Hi-Rel MOSFET in a TO-254AA package


IRFM140 ,100V Single N-Channel Hi-Rel MOSFET in a TO-254AA packageData Sheet No. PD-9.4860 INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE RATED AND dv/dt RATED ..
IRFM150 ,100V Single N-Channel Hi-Rel MOSFET in a TO-254AA packageapplications such as switching . Simple Drive Requirements power supplies and virtually any appl ..
IRFM210A , Advanced Power MOSFET (200V, 1.5ohm, 0.77A)
IRFM210B ,200V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 0.77A, 200V, R = 1.5Ω @V = 10 VDS(on) ..
IRFM214B ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 0.64A, 250V, R = 2.0Ω @V = 10 VDS(on) ..
IRFM220A , Advanced Power MOSFET
ISL6552CB-T ,Microprocessor CORE Voltage Regulator Multi-Phase Buck PWM Controllerfeatures of this controller IC include - Compliant to JEDEC PUB95 MO-220programmable VID codes from ..
ISL6553CB ,Microprocessor CORE Voltage Regulator Multi-Phase Buck PWM ControllerISL6553TMData Sheet November 2000 File Number 4931Microprocessor CORE Voltage Regulator
ISL6553CB-T ,Microprocessor CORE Voltage Regulator Multi-Phase Buck PWM ControllerFeaturesMulti-Phase Buck PWM Controller• Multi-Phase Power ConversionThe ISL6553 multi-phase PWM co ..
ISL6554CB ,Microprocessor CORE Voltage Regulator Using Multi-Phase Buck PWM Control Without Programmable DroopFeaturesUsing Multi-Phase Buck PWM Control • Multi-Phase Power ConversionWithout Programmable Droop ..
ISL6554CBZ-T , Microprocessor CORE Voltage Regulator Using Multi-Phase Buck PWM Control Without Programmable Droop
ISL6556ACB ,Optimized Multi-Phase PWM Controller with 6-Bit DAC for VR10.X ApplicationISL6556A®Data Sheet March 2003 FN9096.1Optimized Multi-Phase PWM Controller


IRFM140-JANTXV2N7218
100V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
lllNlr'iriEilAllihlLhT'lletliNLhlL, AllECy'irlllrllllElq
Dita Sheet No. PD-9.48GC
REPETITIVE AVALANCHE RATED AND dv/dt RATED
IraEDtFrgiiirir© "ir'FhfsuNlellSr'ir'eliiAl
N-GHANNEL
lllRllFRfil'ildil,ti2
ZlliNrPliiiPiltiiil
eJgihliWii'DtliiillN'hiPilEl
ssJAliNlTD0fEilllNll'5F'EPillEil
(REF: NML-Sr''MiiMSCMlt/E5S+
100 Volt, 0.077 Ohm HEXFET
The HEXFET0 technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry design achieves very low on-state
resistance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies and virtually any application where military
and/or high reliability is required.
Product Summary
Part Number BVDSS RDS(on) ID
IRFM140 100V 0.077ft 28A
FEATURES:
Cl Repetitive Avalanche Rating
Cl Isolated and Hermetically Sealed
U Alternative to TO-3 Package
Cl Simple Drive Requirements
Cl Ease of Paralleling
Cl Ceramic Eyelets
CASE STYLE AND DIMENSIONS
13.84 (0.545)
13.59 (0.535)
.,,,,j,i,.,s,.,,.,,e, (0.260)
6.32 (0.249)
20.07 (0.790)
CAUTION
BERYLLIA 1#Mfllht) PER MlL-S-ISSOU
SEE PAGE l-3OD
EvT7.5tr'i'tri)sTl
6.60t0.260) cel
3.78 0.149) 131410.545) - -
t-3'-fa3t-14'i-s,, r3"."aF.ary t7.W"iMiT) --i-kiiyf,1-e,),)
ail >$T E 1-.tta.im )
17.40 sl,,,,, 20.32 0.800 3 J,
k-fl-lt-SI ) TOR 2MHO- ) 111511113553;
1 1 , a i l
31.409235) [El
30.35(1.105) ,
- 1.14 0.045
r-r.jril.o-,,-irQ 'e'jr-t'-:1tlli'r:ii'fii'l 1 *4 -Hs.i)2EEl
2x 4a'(l-jtt-g)Mf-8i-t
LEGEND
2 500111;:
a GATE
.NOYES:
1 DEMENSIONING ' TOLERANGNG Mt ANSI YILSM - 1962.
2 ALL DIMENSIONS ARE SHOWN IN MILUMETERS (INCHES).
Conforms to JEDEC Outline TO-‘ZSAAA'
Dimensions In Millimeters and (Inches)
'For Ieadfon'n configurations see page I-300, fig. 15
IRFM140, JANTXV, JANTX-, 2N7218 Devices
Absolute Maximum Ratings
Parameter IRFMMO. JANTXV, JANTX-. 2N7218 Units
ID @ VGS = 10V, T3 --. 25°C Continuous Drain Current 28
ID @ vas - 10v, Tc - 100°C Continuous Drain Current 20 A
IDM Pulsed Drain Current to 112
PD © Tc " 25°C Max. Power Dissipation 125 w
Linear Deraung Factor 1.0 WIK ©
Iltas thrttrto.Stturety Voltage‘ t20 V
E Sin Ie Pulse Avalanche Energy © 250 md
AS g (See Fig. 12)
'AR Avalanche Current co 28 A
(Sets EAR)
E as tlthm Avalanche Energy co 125 m,1
AR pe (See Fig. 13)
dvldl Peak Diode Recovery thtlttt G) 5.5 _ Wns
(See Fig. 13)
Tg Operating Junction m-55 to 150
TSTG Storage Temperature Range I
Lead Temperature 300 (0063 in. (1.6 mm) from case for IOS)
Weight M (typical) g
Electrical Characteristics a Tg = 25°c (Unlm Otherwise Specified)
Parameter Min. Typ. Max. Units Test Conditions
BVDSS DralmttrSottrmt Breakdown Voltage 100 - - V VGS - tN, ID " 1.0 mA
ABVDSSIATJ Temperature Coetfit%nt of - 0.13 - VPC Reference to 25°C, ID - 1.0 mA
Breakdown Vonage
R Static Drain-to-Source - - 0.077 V = IW, ID = 20A
DS(on) On-State Resistance ll GS co
- - 0.125 vas '. IW, ID " AM
V3501.) Gate Threshold Voltage 2.0 - 4.0 V V05 = Veg. ID = 250 [A
93 Forward Trttnttamduetanett 9.1 - - s to) vos 2 IW, IDS = 20A ©
'DSS Zero Gate Voltage Drain Current - - 25 Vos = M x Max. Rating, VGS = W
- - 250 " vos " M x Max. Rating
vas " 0V, Tg = 125°C
less t3attr-to-Sourtat Leakage Forward - - 100 nA vas - 20V
'GSS GattFteStturtN, Leakage Reverse - - M00 vas '* -20V
% Total Gate Charge 30 - 59 Vias - 10V, ID " 28A
tags t3ttttFttFSourtttt Charge 2.4 - 12 " V08 " os' x Max. Rating
AN Gate-to-Draln (''Miller'0 Charge 12 - 301 See Fig. 6 and 14
tttton) mrn-On Delay Time - - 21 VDD " 50V. ID " 20A, Re " tMil
tr Rise Time - - 145
td(am mrn-Olf Delay Time - - 64 See Fig. 11
tt Fall Tlmo - - 105
LD Internal Drain Inductance - " - Measured from the draln Modltled MOSFET symbol
lead. 6 mm (0.25 In.) from showing the Internal
nH package to center 0 die. Inductancea.
Ls Internal Source Inductance - " - Measured from the
source lead, 6 mm (0.25
in.) from package to
source bonding pad.
Ciss Input Capacitance - 1660 - VGS " ov, Vos " 25V
Goss Output Capacitance - 550 - pF t = 1.0 MHz
Crss Reverse Transfer Capacltanco - 120 - See Fig. 5
CDC Draln-to-Case Capacitance - 12 -
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED