J304 ,N-Channel RF AmplifierS-04028—Rev. D, 04-Jun-017-1J304/305Vishay Siliconix ..
J305 ,SFET RF/VHF/ UHF/ AmplitiersS-04028—Rev. D, 04-Jun-017-3I – Drain Current (mA) I – Gate Leakage (A)I – Saturation Drain Current ..
J308 ,N-Channel JFET High Frequency AmplifierMAXIMUM RATINGSRating Symbol Value Unit1Drain–Source Voltage V 25 VdcDS23Gate–Source Voltage V 25 V ..
J309 ,N-Channel JFET High Frequency AmplifierS-04028—Rev. G, 04-Jun-017-3g – Output Conductance (S)g – Forward Transconductance (mS) osfsJ/SS ..
J310 ,N-Channel JFET High Frequency AmplifierS-04028—Rev. G, 04-Jun-017-1J/SST/U308 SeriesVishay Siliconix Gate-Drain, Gat ..
J500 ,Current regulator diodeS-04234—Rev. F, 02-Jul-013-3Z (M ) T (% C) I (mA)d FCV (V) Z (M )I (mA)L kFJ500 SeriesVishay Silic ..
K6R4008C1D-JI10 , 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
K6R4008C1D-JI10 , 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
K6R4008C1D-KC10 , 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
K6R4008C1D-TI10 , 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
K6R4008C1D-UC10 , 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
K6R4008C1D-UI10 , 256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
J304-J305
N-Channel RF Amplifier
J304/305
Vishay Siliconix
N-Channel JFETs�������� �������� ������������ Excellent High Frequency Gain: J304,
Gps 11 dB (typ) @ 400 MHz Very Low Noise: 3.8 dB (typ) @
400 MHz Very Low Distortion High ac/dc Switch Off-Isolation High Gain: AV = 60 @ 100 �A Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches
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The J304/305 n-channel JFETs provide high-performance
amplification, especially at high-frequency. These products
are available in tape and reel for automated assembly (see
Package Information).
For similar products in TO-236 (SOT-23) packages, see the
2N/SST5484 series data sheet, or in TO-206AF (TO-72)
packages, see the 2N/SST4416 series data sheet.
TO-226AA
(TO-92)Top View
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Gate-Source/Gate-Drain Voltage –30 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Gate Current 10 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature –55 to 150�C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature –55 to 150�C. . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.) 300�C. . . . . . . . . . . . . . . . . . .
Power Dissipationa 350 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes Derate 2.8 mW/�C above 25�C
