ISL9R460PF2 ,4A, 600V Stealth ™, Diode, TO-220F PackageFeatures Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t / t > 3b aThe ISL9R460P ..
ISL9R460S3S ,4A,600V Stealth Diodeapplications. The low I and short t phase RRM a• Switch Mode Power Suppliesreduce loss in switching ..
ISL9R860P2 ,8A, 600V Stealth Diodeapplications. The o Operating Temperature . . . . . . . . . . . . . . . 175 CStealth™ family exhib ..
ISL9R860PF2 ,8A, 600V Stealth DiodeFeatures Soft Recovery . . . . . . . . . . . . . . . . . . . . . . t / t > 1.2b aThe ISL9R860PF2 i ..
ISL9R860S3S ,8A, 600V Stealth Diodeapplications. The low I and short t phase RRM a Switch Mode Power Suppliesreduce loss in switching ..
ISL9R860S3ST ,8A, 600V Stealth Single Diodeapplications. The o• Operating Temperature . . . . . . . . . . . . . . . 175 CStealth™ family exhib ..
K1050E70 , silicon bilateral voltage triggered switch
K1050E70 , silicon bilateral voltage triggered switch
K1050E70 , silicon bilateral voltage triggered switch
K1100E70 , silicon bilateral voltage triggered switch
K1100E70 , silicon bilateral voltage triggered switch
K1100E70 , silicon bilateral voltage triggered switch
ISL9R460PF2
4A, 600V Stealth ™, Diode, TO-220F Package
ISL9R460PF2 July 2003 ISL9R460PF2 4A, 600V Stealth™ Diode General Description Features Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t / t > 3 b a The ISL9R460PF2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t < 20ns rr applications. The Stealth™ family exhibits low reverse o Operating Temperature . . . . . . . . . . . . . . . . . . . . 150 C recovery current (I ) and exceptionally soft recovery RRM under typical operating conditions. Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V This device is intended for use as a free wheeling or boost Avalanche Energy Rated diode in power supplies and other power switching applications. The low I and short t phase reduce loss RRM a Applications in switching transistors. The soft recovery minimizes Switch Mode Power Supplies ringing, expanding the range of conditions under which the diode may be operated without the use of additional Hard Switched PFC Boost Diode snubber circuitry. Consider using the Stealth™ diode with an SMPS IGBT to provide the most efficient and highest UPS Free Wheeling Diode power density design at lower cost. Motor Drive FWD SMPS FWD Formerly developmental type TA49408. Snubber Diode Package Symbol TO-220F K A CATHODE ANODE Device Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Peak Repetitive Reverse Voltage 600 V RRM V Working Peak Reverse Voltage 600 V RWM V DC Blocking Voltage 600 V R I Average Rectified Forward Current (T = 108°C) 4 A F(AV) C I Repetitive Peak Surge Current (20kHz Square Wave) 8 A FRM I Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 50 A FSM P Power Dissipation 22 W D E Avalanche Energy (0.5A, 80mH) 10 mJ AVL T , T Operating and Storage Temperature Range -55 to 150 °C J STG T Maximum Temperature for Soldering L T Leads at 0.063in (1.6mm) from Case for 10s 300 °C PKG Package Body for 10s, See Techbrief TB334 260 °C CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. ©2003 ISL9R460PF2 Rev. A
