| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| ISA1602AM1 |
MITSUBISHI |
N/a |
2500 |
 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
| ISA1602AM1 |
MITSUMI |
N/a |
3000 |
|
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE |
ISA1602AM1-T111-1E MITSUMI
ISA1602AM1-T111-1E ISAHAYA
ISA1602AM1-T111-1E NEC
ISA1602AM1-T111-1F ISAHAYA
ISA1602AM1-T111-1F MITSUBISHI
ISA1602AM1-T111A-1E MITSHUBI
ISA1602AM1-T111A-1F MITSHUBI
ISA1602AM1-T111U-1F ISAHAYA
ISA1602AM-T111-1E MITSUBISH
ISA1603AM1-T111A-1Q ISAHAYA
ISA1603AM1-T111A-1R ISAHAYA
ISA1603AMI MITSUBISHI
ISA1603AMI MITSUBISHI
ISA20. SOLIDSTA, Telecommunications
ISA2000 IMAGIS
ISA40. SOLIDSTA, Telecommunications
ISA812
ISAO N/A
ISATECH041.13.01 N/M
ISB1T20 FSC
ISB623000C Goldstar
ISB-A01-1 SANYO
ISB-A02-2 SANYO
ISB-A13-0 SANYO
ISB-A14-0 SANYO
ISB-A14-1 SANYO
ISB-A15-1-E SANYO
ISB-A30-0-TBM-E SANYO
ISB-A46-0-TRM-E SANYO
ISB-B16-0-E SANYO
ISB-E34-0-TRM SANYO
ISB-E35-1-TRM SANYO
ISB-E41-0-TBM-E SANYO
ISBILV6416-10T
ISC1162
ISA1602AM1 , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
ISC-1210 ,Molded, Shielded, Wirewound InductorELECTRICAL SPECIFICATIONSInductance Range: .01µH to 100µH.TEST SELF- RATEDInductance Tolerance: ± ..
ISC1210ER100K , Surface Mount, Molded, Shielded Inductor
ISC-1812 ,Molded, Shielded, Wirewound InductorELECTRICAL SPECIFICATIONSL & Q FREQ. MIN. CURRENTIND. Q MAX.Inductance Range: 0.10µH to 1000µH.TOL ..
ISC5804AT2 , Transistor
JAN1N4148-1 , Glass Axial Switching Diode
JAN1N753A , SILICON 400 mW ZENER DIODES
JAN2N1479 , NPN SILICON MEDIUM POWER TRANSISTOR
