IRLZ24NPBF ,55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
IRLZ24NS ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRLZ24S ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
IRLZ24STRL ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection
resistance and can dissipate up to 2.0W in a t ..
IRLZ24STRR ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD-9.904
International
TOR Rectifier IRLZ24S
HEXFET® Power MOSFET
. Surface Mount
. Av ..
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PD-9.558C
|RL234
HEXFET® Power MOSFET
q Dynamic dv/dt Ratin ..
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IRLZ24N-IRLZ24NPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
:raRRectifier
Logic-Level Gate Drive
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designerwith an extremely efficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
PD - 91357C
IRLZ24N
HEXFET® Power MOSFET
VDSS = 55V
" RDSM, = 0.069
s ID = 18A
levelsto approximately 50 watts. The lowthermal resistance TO-220AB
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V 18
ID @ To = 100°C Continuous Drain Current, VGS @ 10V 13 A
IDM Pulsed Drain Current CO 72
Pro @Tc = 25''C Power Dissipation 45 W
Linear Derating Factor 0.30 W/''C
Ves Gate-to-Source Voltage 116 V
EAS Single Pulse Avalanche Energy © 68 m]
IAR Avalanche Current© 11 A
EAR Repetitive Avalanche Energy® 4.5 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rox, Junction-to-Case - - 3.3
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - "CAN
ReJA Junction-to-Ambient - -- 62
07/12/02
IRLZ24N
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V V95 = OV, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.061 - V/°C Reference to 25°C, ID = 1mA
- - 0.060 Vss=10V,lD=11A©
R030") Static Drain-to-Source On-Resistance - - 0.075 Q Ves = 5.0V, ID = 11A (4)
- - 0.105 Vss = 4.0V, ID = 9.0A ©
VGS(th) Gate Threshold Voltage 1.0 - 2.0 V Vros = VGs, ID = 250PA
gfs Forward Transconductance 8.3 - - S l/ross = 25V, ID = 11A
bss Drain-to-Source Leakage Current : Tf, 22550 PA VS: , ::x V: =" tf, Tu = 150°C
Gate-to-Source Forward Leakage - - 100 Ves = 16V
less Gate-to-Source Reverse Leakage - - -100 nA Vss = -16V
% Total Gate Charge - - 15 ID = 11A
ths Gate-to-Source Charge - - 3.7 nC l/ross = 44V
di Gate-to-Drain ("Miller") Charge - - 8.5 V65 = 5.0V, See Fig. 6 and 13 C9
tdion) Turn-On Delay Time - 7.1 - VDD = 28V
tr Rise Time - 74 - ns ID = 11A
tdm) Turn-Off Delay Time - 20 - Rs = 129, Ves = 5.0V
tt Fall Time 29 R9 = 2.49, See Fig. 10 G)
. Between lead, D
Lo Internal Drain Inductance - 4.5 - nH 6mm (0.25in.) E )
Ls Internal Source Inductance - 7.5 - from package G
and center of die contact s
Ciss Input Capacitance - 480 - Ves = 0V
Coss Output Capacitance - 130 - pF VDs = 25V
Crss Reverse Transfer Capacitance - 61 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ _ 18 MOSFET symbol D
(Body Diode) A showing the
la, Pulsed Source Current - - 72 integral reverse G
(Body Diode) (D p-n Junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 11A, VGs = 0V co
trr Reverse Recovery Time - 60 90 ns Tu = 25°C, IF = 11A
Qrr Reverse RecoveryCharge - 130 200 nC di/dt = 100A/ps (9
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls+Lo)
Notes:
OD Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© VDD = AN, starting To = 25''C, L = 790pH
Rs = 259, IAS=11A. (See Figure 12)
© Iso f 11A, di/dt f 290/Ups, I/oo S V(BR)DSS:
Tu f 175''C
© Pulse width S 300ps; duty cycle 3 2%.
