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IRLR7843TRLPBFIRN/a24600avai30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
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IRLR7843TRLPBF-IRLR7843TRPBF-IRLU7843PBF
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
TOR Rectifier
Applications
PD - 9544OB
IRLR7843PbF
IRLU7843PbF
HEXFET® Power MOSFET
0 High Frequency Synchronous Buck
Converters for Computer Processor Power Voss RDS(on) max tilg
q High Frequency Isolated DC-DC 30V 3.3mf2 34nC
Converters with Synchronous Rectification
for Telecom and Industrial Use
q Lead-Free
stil)), 4si,it
Benefits l ' _ . _
. Very Low RDS(on) at 4.5V Vss
o Ultra-Low Gate Impedance
0 Fully Characterized Avalanche Voltage D-Pak l-Pak
IRLR7843PbF IRLU7843PbF
and Current
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain-to-Source Voltage 30 V
l/tss Gate-to-Source Voltage t 20
ID @ To = 25°C Continuous Drain Current, Vss © 10V 161 ©
ID @ TC = 100°C Continuous Drain Current, Vss © 10V 113© A
IDM Pulsed Drain Current © 620
p0 @Tc = 25°C Maximum Power Dissipation © 140 W
PD @Tc = 100°C Maximum Power Dissipation © 71
Linear Derating Factor 0.95 W/°C
To Operating Junction and -55 to + 175 °C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - 1.05
RNA Junction-to-Ambient (PCB Mount) © - 50 °C/W
ROJA Junction-to-Ambient - 110
Notes OD through S are on page 11
1
04/30/08
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IRLR/U7843PbF International
TOR Rectifier
Static © TJ = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V l/ss = 0V, ID = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 19 - mV/°C Reference to 25°C, lo = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 2.6 3.3 mf2 Vss = 10V, ID = 15A ©
- 3.2 4.0 I/as = 4.5V, ID = 12A OD
VGSm-I) Gate Threshold Voltage 1.4 - 2.3 V Vos = Vas, ID = 250pA
AVGS(th)/ATJ Gate Threshold Voltage Coefficient - -5.4 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 PA Vos = 24V, l/ss = 0V
- - 150 Vos = 24V, Vas = OV, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gfs Forward Transconductance 37 -- - S l/rss = 15V, ID = 12A
09 Total Gate Charge - 34 50
0951 Pre-Vth Gate-to-Source Charge - 9.1 - Vos = 15V
0952 Post-Vth Gate-to-Source Charge - 2.5 - nC l/ss = 4.5V
di Gate-to-Drain Charge - 12 - ID = 12A
ngdr Gate Charge Overdrive - 10 - See Fig. 16
QSW Switch Charge (ass + di) - 15 -
Qoss Output Charge - 21 - nC Vos = 15V, l/ss = 0V
tum) Turn-On Delay Time - 25 - VDD = 15V, Vas = 4.5VC3)
t, Rise Time - 42 - ID = 12A
td(off) Turn-Off Delay Time - 34 - ns Clamped Inductive Load
tf Fall Time - 19 -
Ciss Input Capacitance -.-_ 4380 ___ Vss = 0V
Coss Output Capacitance - 940 -- pF Vos = 15V
Crss Reverse Transfer Capacitance --.- 430 - f = 1.0MHz
Avalanche Characteristics
Parameter . Max.
ng e ergy 1440
e rre 12
e nergy 14
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 161 (4) MOSFET symbol D
(Body Diode) A showing the E
ISM Pulsed Source Current - - 620 integral reverse G
(Body Diode) Ci) p-n junction diode. a
Vso Diode Forward Voltage - - 1.0 V TJ = 25°C, ls = 12A, l/ss = 0V ©
trr Reverse Recovery Time - 39 59 ns TJ = 25°C, IF = 12A, VDD = 15V
Orr Reverse Recovery Charge - 36 54 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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