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IRLS640ASECN/a35avaiPower MOSFET


IRLS640A ,Power MOSFETFEATURESBV = 200 VDSS! Logic-Level Gate DriveR = 0.18 ΩDS(on) ! Avalanche Rugged Technology! R ..
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IRLS640A
Power MOSFET
IRLS640A Advanced Power MOSFET FEATURES BV = 200 V DSS ! Logic-Level Gate Drive R = 0.18 Ω DS(on) ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology I = 9.8 A D ! Lower Input Capacitance ! Improved Gate Charge TO-220F ! Extended Safe Operating Area ! Lower Leakage Current : 10 μA (Max.) @ V = 200V DS ! Lower R : 0.145Ω (Typ.) DS(ON) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units V Drain-to-Source Voltage 200 V DSS Continuous Drain Current (T =25℃) 9.8 C I A D Continuous Drain Current (T =100℃) 6.2 C I Drain Current-Pulsed ① 63 A DM V Gate-to-Source Voltage ±20 V GS E Single Pulsed Avalanche Energy ② 64 mJ AS I Avalanche Current ① 18 A AR E Repetitive Avalanche Energy ① 4.0 mJ AR dv/dt Peak Diode Recovery dv/dt ③ 5 V/ns Total Power Dissipation (T =25℃) 40 W C P D Linear Derating Factor 0.32 W/℃ Operating Junction and T , T - 55 to +150 J STG Storage Temperature Range ℃ Maximum Lead Temp. for Soldering T 300 L Purposes, 1/8" from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. Units R Junction-to-Case -- 3.13 θJC o C/W R Junction-to-Ambient -- 62.5 θJA Rev. A
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