IRLS520A ,Power MOSFETFEATURESBV = 100 VDSSn Avalanche Rugged TechnologyR = 0.22ΩDS(on) n Rugged Gate Oxide Techn ..
IRLS640A ,Power MOSFETFEATURESBV = 200 VDSS! Logic-Level Gate DriveR = 0.18 ΩDS(on) ! Avalanche Rugged Technology! R ..
IRLU014 , HEXFET POWER MOSFET
IRLU024N ,55V Single N-Channel HEXFET Power MOSFET in a I-Pak packageapplications. Power dissipation levels up to 1.5 wattsIRLR024N IRLU024Nare possible in typical ..
IRLU024NPBF ,55V Single N-Channel HEXFET Power MOSFET in a I-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRLU024Z ,55V Single N-Channel HEXFET Power MOSFET in a I-Pak packagePD - 95825AIRLR024Z IRLU024Z®HEXFET Power MOSFET D Logic LevelV = 55VDSS Adv ..
ISPLSI2064V-60LT100 , 3.3V High Density Programmable Logic
ISPLSI2064V-60LT100 , 3.3V High Density Programmable Logic
ISPLSI2064V-60LT100I , 3.3V High Density Programmable Logic
ISPLSI2064V-60LT44 , 3.3V High Density Programmable Logic
ISPLSI2064V-60LT44I , 3.3V High Density Programmable Logic
ISPLSI2064V-80LT100I , 3.3V High Density Programmable Logic
IRLS520A
Power MOSFET
IRLS520A Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 μA (Max.) @ VDS = 100V Lower RDS(ON) : 0.176Ω (Typ.)
Advanced Power MOSFET
FEATURES
Absolute Maximum RatingsRev. A
Thermal Resistance
