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IRLR9343IRN/a25200avai-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package


IRLR9343 ,-55V Single P-Channel HEXFET Power MOSFET in a D-Pak packageElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
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IRLR9343
-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package
PD - 95850
IRLR9343
IRLU9343
IRLU9343-701
International
TOR Rectifier
DIGITAL AUDIO MOSFET
Features
0 Advanced Process Technology
. Key Parameters Optimized for Class-D Audio Key Parameters
Amplifier Applications Vros -55 V
. Low RDSON for Improved Efficiency R t . V = -10V 93 mg
. Low ck; and st for Better THD and Improved DS(ON) yp @ GS -
Efficiency RDS(ON) typ. @ VGS - -4.5V 150 m9
. Low Qrr for Better THD and Lower EMI Qg typ. 31 nC
. 175°C Operating Junction Temperature for Tu max 175 "C
Ruggedness
o Repetitive Avalanche Capability for Robustness and
Reliability D 4ii)
. Multiple Package Options ,
D-Pak I-Pak
G IRLR9343 IRLU9343
l-Pak Leadform 701
S IRLU9343-701
Refer to page 10 for package outline
Description
This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery
and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD
and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio ampliher
applications.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage -55 V
VGS Gate-to-Source Voltage :20
ID @ To = 25°C Continuous Drain Current, VGS @ -10V -20 A
ID @ To = 100°C Continuous Drain Current, VGS @ 10V -14
G, Pulsed Drain Current co -60
Pro @Tc = 25°C Power Dissipation 79 W
Po @Tc = 100°C Power Dissipation 39
Linear Derating Factor 0.53 W/°C
To Operating Junction and -40 to + 175 "C
TSTG Storage Temperature Range
Clamping Pressure co - N
Thermal Resistance
Notes (O

Parameter
Junction-to-Case
u n- o- oun
u n-to- a r
through © are on page 10
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4/1/04
IRLR/U9343 & IRLU9343-701 International
122R Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage -55 - - V VGS = 0V, ID = -250pA
ABN/oss/AT,, Breakdown Voltage Temp. Coefficient - -52 - mV/°C Reference to 25°C, ID = -1mA
RDSW Static Drain-to-Source On-Resistance - 93 105 m9 VGS = -10V, ID = -3.4A ©
- 150 170 VGS = -4.5V, ID = -2.7A ©
VGsah) Gate Threshold Voltage -1.0 - - V Vros = VGS, ID = -250PA
AVGs(m)/ATJ Gate Threshold Voltage Coefficient - -3.7 - mV/°C
loss Drain-to-Source Leakage Current - - -2.0 pA Vos = -55V, VGS = 0V
- - -25 VDS = -55V, VGS = 0V, Tu = 125°C
less Gate-to-Source Forward Leakage - - -100 nA VGS = -20V
Gate-to-Source Reverse Leakage - - 100 N/ss = 20V
git Forward Transconductance 5.3 - - S Vos = -25V, ID = -14A
Qg Total Gate Charge - 31 47 Vros = -44V
Qgs Gate-to-Source Charge - 7.1 - VGS = -10V
di Gate-to-Drain Charge - 8.5 - lr, = -14A
ngdr Gate Charge Overdrive - 15 - See Fig. 6 and 19
thon) Turn-On Delay Time - 9.5 - Voc, = -28V, VGS = -10V co
t, Rise Time - 24 - ID = -14A
tam) Turn-Off Delay Time - 21 - ns RG = 2.59
t, Fall Time - 9.5 -
Ciss Input Capacitance - 660 - VGS = 0V
Coss Output Capacitance - 160 - pF 1/ros = -50V
Crss Reverse Transfer Capacitance - 72 - f = 1.0MHz, See Fig.5
Coss Effective Output Capacitance - 280 - VGS = 0V, Vos = 0V to -44V
LD Internal Drain Inductance - 4.5 - Between lead,
nH 6mm (0.25in.)
Ls Internal Source Inductance - 7.5 - from package
and center of die contact ©
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 120 mJ
IAR Avalanche Current co See Fig. 14, 15, 17a, 17b A
EAR Repetitive Avalanche Energy © mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls @ To = 25°C Continuous Source Current - - -20 MOSFET symbol D
(Body Diode) A showing the fit
ISM Pulsed Source Current - - -60 integral reverse G D;
(Body Diode) co p-n junction diode. s
VSD Diode Forward Voltage - - -1.2 V To = 25°C, ls = -14A, VGS = 0V ©
trr Reverse Recovery Time - 57 86 ns T J = 25°C, IF = -14A
Qrr Reverse Recovery Charge - 120 180 nC di/dt = 100A/ps ©
2
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