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IRLR7811W
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 94492
International
TOR Rectifier SMPS MOSFET IRLR781 1W
HEXFET© Power MOSFET
Applications
. High Frequency Synchronous Buck Voss RDS(on) max %
Converters for Computer Processor Power 30V 10.5mn 19nC
q High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
Benefits
o Very Low RDS(on) at 4.5V VGS
o Ultra-Low Gate Impedance
0 Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25''C Continuous Drain Current, VGS @ 10V 64(9
ID @ To = 100°C Continuous Drain Current, VGS @ 10V 45@ A
IDM Pulsed Drain Current C) 260
Po @Tc = 25°C Power Dissipation 71
PD @TA = 100°C Power Dissipation* 1.5 W
Linear Derating Factor 0.48 W/°C
Ves Gate-to-Source Voltage $12 V
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
RQJC Junction-to-Case - 2.1
ReJA Junction-to-Ambient (PCB mount)* - 50 'C/W
ReJA Junction-to-Ambient - 1 10
Notes co through G) are on page 9
1
06/10/02
|RLR7811W
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDss Drain-to-Source Breakdown Voltage 30 - - V Vss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coemcient - 27 - mV/°C Reference to 25°C, ID = 1mA ©
RDS(on) Static Drain-to-Source On-Resistance _- (75-: 1: mn [e, , 113%;1152': ©
VGS(th) Gate Threshold Voltage - 1.5 2.5 V Vros = VGs, ID = 250pA
AVGS([h)/ATJ Gate Threshold Voltage Coemcient - -5.0 - mV/°C
loss Drain-to-Source Leakage Current : : 13500 pA V: , it)), 2:: =" 8:: To = 125°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 12V
Gate-to-Source Reverse Leakage - - -100 VGS = -12V
gfs Forward Transconductance 58 - - S Vros = 15V, ID = 12A
% Total Gate Charge Control Fet - 21 31 nC -
0951 Pre-Vth Gate-Source Charge - 5.0 - VDs=20V l DRAINV0LTAGE
Qgs2 Post-Vth Gate-Source Charge - 1.7 - VGS = 4.5V m 1mnvoern-:‘L
di Gate-to-Drain Charge - 6.6 - nC ID = 12A 1"}: "r,",," GATEV0LTAGE
ngdr Gate Charge Overdrive - 5.5 - 'jr,
st Switch Charge (0952 + di) - 8.3 - DRAIN (2URREMT
09 Total Gate Charge Sync Fet - 17 -
Qoss Output Charge - 10 - VDS = 16V, VGS = 0V
Rg Gate Resistance - 1.6 -
tum) Turn-On Delay Time - 18 - VDD = 16V, VGS = 4.5V©
tr Rise Time - 4.8 - ns ID = 12A
tam) Turn-Off Delay Time - 11 - Clamped Inductive Load
tf Fall Time - 23 -
Ciss Input Capacitance - 2260 - I/ss = 0V
Coss Output Capacitance - 420 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 180 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EPs Single Pulse Avalanche Energy© - 140 mJ
IAR Avalanche Current© - 12 A
EAR Repetitive Avalanche Energy0) - 7.1 mJ
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 64© A showing the
ISM Pulsed Source Current - _ 260 integral reverse G
(Body Diode) co p-n junction diode. s
VSD Diode Forward Voltage - - 1.2 V TJ = 25°C, ls = 12A, N/ss = 0V ©
trr Reverse Recovery Time - 30 45 ns TJ = 25°C, IF =12A
Qrr Reverse RecoveryCharge -..- 27 41 nC di/dt = 100A/us ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
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