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IRLR3717
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
ISER Rectifier
Applications
q High Frequency Synchronous Buck
Converters for Computer Processor Power
0 High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
Benefits
q Very Low RDS(on) at 4.5V VGS
o Ultra-Low Gate Impedance
0 Fully Characterized Avalanche Voltage
PD - 9471 BB
IRLR3717
IRLU3717
HEXFET© Power MOSFET
Voss RDS(on)max Ctg
20V 4.0mf2 21 nC
tj,j,i)er, 4jiiit ",
I, "ic..
D-Pak I-Pak
and Current IRLR3717 IRLU3717
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain-to-Source Voltage 20 V
VGS Gate-to-Source Voltage i 20
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 120© A
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 81 ©
IDM Pulsed Drain Current CD 460
PD @Tc = 25''C Maximum Power Dissipation 89 W
PD @Tc = 100°C Maximum Power Dissipation 44
Linear Derating Factor 0.59 W/°C
T J Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case © - 1.69 ''C/W
ROJA Junction-to-Ambient (PCB Mount) C96) - 50
ROJA Junction-to-Ambient © - 1 10
Notes co through © are on page 11
1
1/24/05
IRLR/U3717 International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 20 - - V Vss = 0V, ID = 250pA
ABN/oss/AT: Breakdown Voltage Temp. Coefficient - 12 - mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 3.4 4.0 mf2 VGS = 10V, b = 15A ©
- 4.6 5.5 Vss = 4.5V, ID = 12A ©
VGS(th) Gate Threshold Voltage 1.55 2.0 2.45 V Vos = VGS, ID = 250pA
AVGS(m)/ATJ Gate Threshold Voltage CoeNcient - -6.4 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 PA Vos = 16V, VGS = 0V
- - 150 Vos = 16V, N/ss = ov, T: = 125°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gfs Forward Transconductance 49 - - S Vos = 10V, ID = 12A
Qg Total Gate Charge - 21 31
0951 Pre-Vth Gate-to-Source Charge - 6.4 - Vos = 10V
Qgs2 Post-Vth Gate-to-Source Charge - 1.9 - nC VGS = 4.5V
di Gate-to-Drain Charge - 7.2 - ID = 12A
ngdr Gate Charge Overdrive - 5.5 - See Fig. 16
st Switch Charge (Qgs2 + di) - 9.1 -
Qoss Output Charge - 13 - nC Vos = 10V, Ves = 0V
td(on) Turn-On Delay Time - 14 - Vor, = 10V, I/ss = 4.5V ©
t, Rise Time - 14 - ns ID = 12A
lam Turn-Off Delay Time - 5.8 - Clamped Inductive Load
tr Fall Time - 16 -
Ciss Input Capacitance - 2830 - VGS = 0V
Coss Output Capacitance - 920 - pF Vos = 10V
Crss Reverse Transfer Capacitance - 420 - f = 1.0MHz
Avalanche Characteristics
Parameter . Max.
nergy 460
epe va 8.9
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 120© MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 460 integral reverse G
(Body Diode) C) p-n junction diode. S
VSD Diode Forward Voltage - - 1.0 V To = 25°C, Is = 12A, VGS = 0V ©
t, Reverse Recovery Time - 22 33 ns T J = 25°C, IF = 12A, VDD = 10V
er Reverse Recovery Charge - 13 19 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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