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IRLR3103IRN/a25200avai30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
IRLR3103PBFIRN/a200avai30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
IRLR3103TRIRN/a994000avai30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
IRLR3103TRIORN/a104avai30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
IRLR3103TRLIRN/a30000avai30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
IRLU3103IRN/a30000avai30V Single N-Channel HEXFET Power MOSFET in a I-Pak package


IRLR3103TR ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packagePD - 91333EIRLR/U3103®HEXFET Power MOSFETl Logic-Level Gate DriveDl Ultra Low On-ResistanceV = 30VD ..
IRLR3103TR ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRLR3103TRL ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. D -PAK I-PAKThe D-PAK is designed for surface mounting using TO -252AA TO -251AAv ..
IRLR3103TRLPBF ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packagePD - 95085AIRLR/U3103PbF®HEXFET Power MOSFET Logic-Level Gate Drive Ultra Low On-ResistanceD Sur ..
IRLR3103TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRLR3105 ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
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IRLR3103-IRLR3103PBF-IRLR3103TR-IRLR3103TRL-IRLU3103
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
. -91333
International PD E
152R Rectifier IRLR/U3103
HEXFET® Power MOSFET
o Logic-Level Gate Drive D
o Ultra Low On-Resistance VDSS = 30V
0 Surface Mount (IRLR3103)
0 Straight Lead (IRLU3103) _ =
o Advanced Process Technology G “W A RDS(on) 0'0199
0 Fast Switching -
o Fully Avalanche Rated s ID - 55As
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
D-PAK I-PAK
The D-PAK is designed for surface mounting using TO-252AA TO-251AA
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 55S
ID @ Tc = 100°C Continuous Drain Current, I/ss @ 10V 39© A
IDM Pulsed Drain Current COO) 220
PD @Tc = 25°C Power Dissipation 107 W
Linear Derating Factor 0.71 W/°C
I/ss Gate-to-Source Voltage i 16 V
EAs Single Pulse Avalanche Energy©© 240 mJ
IAR Avalanche Current(00) 34 A
EAR Repetitive Avalanche EnergyO© 11 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case - 1 .4
RNA Junction-to-Ambient (PCB mount) ** - 50 'C/W
Ram Junction-to-Ambient - 1 10
1
11/11/98

IRLR/U3103 International
TOR Rectifier
Electrical Characteristics @ Tu = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = 250pA
AV. . . - - 0.019 l/ss =10V,ID = 33A GD
RDS(on) Static Drain-to-Source On-Resistance - - 0.024 (2 VGS = 4.5V, ID = 25A co
VGS(th) Gate Threshold Voltage 1.0 - - V VDS = l/ss, ID = 250pA
gts Forward Transconductance 23 - - S Ws = 25V, ID = 34ACO
loss Drain-to-Source Leakage Current _- _- 22550 pA V: =" fg', V: =" g, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 n A l/ss = 16V
Gate-to-Source Reverse Leakage - - -100 VGs = -16V
Qg Total Gate Charge - - 50 ID = 34A
Qgs Gate-to-Source Charge - - 14 nC VDS = 24V
di Gate-to-Drain ("Miller") Charge - - 28 VGS = 4.5V, See Fig. 6 and 13 COO)
td(on) Turn-On Delay Time - 9.0 - VDD = 15V
tr Rise Time - 210 - ns ID = 34A
td(off) Turn-Off Delay Time - 20 - Rs = 3.4n, I/ss = 4.5V
tf Fall Time 54 RD = 0.439, See Fig. 10 ©©
LD Internal Drain Inductance - 4.5 - nH 2t/eji.n/ei,f)'' Q 3
LS Internal Source Inductance - 7.5 - from package . G
and center of die contact© s
Ciss Input Capacitance - 1600 - VGs = 0V
Coss Output Capacitance - 640 - pF Ws = 25V
Crss Reverse Transfer Capacitance - 320 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 556) MOSFET symbol D
(Body Diode) A showing the _,
ISM Pulsed Source Current integral reverse G E
(Body Diode) (OO) - - 220 p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 28A, VGS = 0V GD
trr Reverse Recovery Time - 81 120 ns Tu = 25°C, IF = 34A
G, Reverse RecoveryCharge - 210 310 nC di/dt = 100A/ps 696)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
(D Repetitive rating; pulse width limited by © Pulse width S 300ps; duty cycle 3 2%
max. junction temperature. ( See fig. 11 ) (5) Calculated continuous current based on maximum allowable junction
© VDD = 15V, starting TJ = 25°C, L = 300pH temperature; Package limitation current = 20A
Rs = 25f2, IAS = 34A. (See Figure 12) © This is applied for I-PAK, Ls of D-PAK is measured between lead and
© I s 34A,di/dts140A/ s, v IN , center of die contact
185:: 175°C p DD (BR)DSS © Uses IRL3103 data and test conditions
** When mounted on 1" square PCB (FR-4 or G-IO Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
2

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